STMicroelectronics BUL98
- Part Number:
- BUL98
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2466752-BUL98
- Description:
- TRANS NPN 450V 12A TO-220
- Datasheet:
- BUL98
STMicroelectronics BUL98 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics BUL98.
- Lifecycle StatusACTIVE (Last Updated: 7 months ago)
- Factory Lead Time8 Weeks
- Contact PlatingTin
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTube
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Max Power Dissipation110W
- Base Part NumberBUL98
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation110W
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)450V
- Max Collector Current12A
- DC Current Gain (hFE) (Min) @ Ic, Vce15 @ 5A 5V
- Current - Collector Cutoff (Max)100μA
- JEDEC-95 CodeTO-220AB
- Vce Saturation (Max) @ Ib, Ic1.5V @ 2.4A, 12A
- Collector Emitter Breakdown Voltage450V
- Emitter Base Voltage (VEBO)9V
- hFE Min10
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
BUL98 Overview
This device has a DC current gain of 15 @ 5A 5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 1.5V @ 2.4A, 12A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 9V.A maximum collector current of 12A volts is possible.
BUL98 Features
the DC current gain for this device is 15 @ 5A 5V
the vce saturation(Max) is 1.5V @ 2.4A, 12A
the emitter base voltage is kept at 9V
BUL98 Applications
There are a lot of STMicroelectronics
BUL98 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 15 @ 5A 5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 1.5V @ 2.4A, 12A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 9V.A maximum collector current of 12A volts is possible.
BUL98 Features
the DC current gain for this device is 15 @ 5A 5V
the vce saturation(Max) is 1.5V @ 2.4A, 12A
the emitter base voltage is kept at 9V
BUL98 Applications
There are a lot of STMicroelectronics
BUL98 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BUL98 More Descriptions
BUL98 Series NPN 450 V 12 A Fast-Switching Power Transistor - TO-220
Bipolar Transistors - BJT Hi Vltg FAST SWITCH NPN Pwr TRANSISTOR
Power Bipolar Transistor, 12A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Trans GP BJT NPN 450V 12A 3-Pin(3 Tab) TO-220 Tube
High voltage fast-switching npn power transistor
TRANSISTOR, NPN TO-220; Transistor Type:Bipolar; Transistor Polarity:NPN; Collector-to-Emitter Breakdown Voltage:450V; Current Ic Continuous a Max:12A; Voltage, Vce Sat Max:0.5V; Power Dissipation:110W; Min Hfe:15; Case Style:TO-220; Termination Type:Through Hole; Current Ic Max:12A; Current Ic hFE:5mA; Power, Ptot:110W
Bipolar Transistors - BJT Hi Vltg FAST SWITCH NPN Pwr TRANSISTOR
Power Bipolar Transistor, 12A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Trans GP BJT NPN 450V 12A 3-Pin(3 Tab) TO-220 Tube
High voltage fast-switching npn power transistor
TRANSISTOR, NPN TO-220; Transistor Type:Bipolar; Transistor Polarity:NPN; Collector-to-Emitter Breakdown Voltage:450V; Current Ic Continuous a Max:12A; Voltage, Vce Sat Max:0.5V; Power Dissipation:110W; Min Hfe:15; Case Style:TO-220; Termination Type:Through Hole; Current Ic Max:12A; Current Ic hFE:5mA; Power, Ptot:110W
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
10 April 2024
LM2904DT Dual Operational Amplifier: Features, Package and Specifications
Ⅰ. Overview of LM2904DTⅡ. Electrical characteristic curvesⅢ. Features of LM2904DTⅣ. Package of LM2904DTⅤ. Supply voltage and current requirements of LM2904DTⅥ. Specifications of LM2904DTⅦ. How to use LM2904DT in... -
10 April 2024
STM32F103CBT6 Microcontroller Features, Application and STM32F103CBT6 vs CKS32F103C8T6
Ⅰ. Description of STM32F103CBT6Ⅱ. Low-power modes of STM32F103CBT6Ⅲ. Functional features of STM32F103CBT6Ⅳ. Application fields of STM32F103CBT6Ⅴ. GPIO attributes and configuration process of STM32F103CBT6Ⅵ. How to program and debug... -
11 April 2024
A Complete Guide to IR2104 Half-Bridge Driver
Ⅰ. IR2104 descriptionⅡ. IR2104 half-bridge driver circuit characteristicsⅢ. IR2104 half-bridge driver working principleⅣ. Practical application of IR2104Ⅴ. Recommended operating conditions of IR2104Ⅵ. What are the heat dissipation measures... -
11 April 2024
74LS138 Decoder Working Principle, Application Scenarios and 7AHC138 vs 74LS138
Ⅰ. Introduction to 74LS138Ⅱ. What is the meaning of the 74LS138 naming?Ⅲ. Working principle of 74LS138Ⅳ. Example of application circuit diagram of 74LS138Ⅴ. Application scenarios of 74LS138 decoderⅥ....
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.