BUL216

STMicroelectronics BUL216

Part Number:
BUL216
Manufacturer:
STMicroelectronics
Ventron No:
2846039-BUL216
Description:
TRANS NPN 800V 4A TO-220
ECAD Model:
Datasheet:
BUL216

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Specifications
STMicroelectronics BUL216 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics BUL216.
  • Lifecycle Status
    ACTIVE (Last Updated: 7 months ago)
  • Factory Lead Time
    8 Weeks
  • Contact Plating
    Tin
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Number of Pins
    3
  • Weight
    90.718474mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Tube
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    800V
  • Max Power Dissipation
    90W
  • Current Rating
    4A
  • Base Part Number
    BUL216
  • Pin Count
    3
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    90W
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    800V
  • Max Collector Current
    4A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    12 @ 400mA 5V
  • Current - Collector Cutoff (Max)
    250μA
  • JEDEC-95 Code
    TO-220AB
  • Vce Saturation (Max) @ Ib, Ic
    3V @ 660mA, 2A
  • Collector Emitter Breakdown Voltage
    800V
  • Collector Emitter Saturation Voltage
    1V
  • Collector Base Voltage (VCBO)
    1.6kV
  • Emitter Base Voltage (VEBO)
    9V
  • hFE Min
    12
  • VCEsat-Max
    3 V
  • Turn Off Time-Max (toff)
    4020ns
  • Height
    9.15mm
  • Length
    10.4mm
  • Width
    4.6mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
BUL216 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 12 @ 400mA 5V.With a collector emitter saturation voltage of 1V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 3V @ 660mA, 2A.If the emitter base voltage is kept at 9V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 4A.Collector current can be as low as 4A volts at its maximum.

BUL216 Features
the DC current gain for this device is 12 @ 400mA 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 3V @ 660mA, 2A
the emitter base voltage is kept at 9V
the current rating of this device is 4A


BUL216 Applications
There are a lot of STMicroelectronics
BUL216 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
BUL216 More Descriptions
Transistor General Purpose BJT NPN 800 Volt 4 Amp 3-Pin 3 Tab TO-220 Tube
TRANS NPN 800V 4A TO-220 / Trans GP BJT NPN 800V 4A 9000mW 3-Pin(3 Tab) TO-220AB Tube
800V 90W 4A 12@400mA5V 3V@2A660mA NPN 150¡Í@(Tj) TO-220 Bipolar Transistors - BJT ROHS
Power Bipolar Transistor, 4A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Transistor NPN, TO-220AB 800V 4AThrough Hole
Power Bipolar, NPN, 5V, 660mA, TO-220, TubeSTMicroelectronics SCT
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
TRANSISTOR, NPN, TO-220; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 800V; Transition Frequency ft: -; Power Dissipation Pd: 90W; DC Collector Current: 2A; DC Current Gain hFE: 40hFE; Transistor Case Style: TO
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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