STMicroelectronics BUL216
- Part Number:
- BUL216
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2846039-BUL216
- Description:
- TRANS NPN 800V 4A TO-220
- Datasheet:
- BUL216
STMicroelectronics BUL216 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics BUL216.
- Lifecycle StatusACTIVE (Last Updated: 7 months ago)
- Factory Lead Time8 Weeks
- Contact PlatingTin
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Weight90.718474mg
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTube
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC800V
- Max Power Dissipation90W
- Current Rating4A
- Base Part NumberBUL216
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation90W
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)800V
- Max Collector Current4A
- DC Current Gain (hFE) (Min) @ Ic, Vce12 @ 400mA 5V
- Current - Collector Cutoff (Max)250μA
- JEDEC-95 CodeTO-220AB
- Vce Saturation (Max) @ Ib, Ic3V @ 660mA, 2A
- Collector Emitter Breakdown Voltage800V
- Collector Emitter Saturation Voltage1V
- Collector Base Voltage (VCBO)1.6kV
- Emitter Base Voltage (VEBO)9V
- hFE Min12
- VCEsat-Max3 V
- Turn Off Time-Max (toff)4020ns
- Height9.15mm
- Length10.4mm
- Width4.6mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
BUL216 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 12 @ 400mA 5V.With a collector emitter saturation voltage of 1V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 3V @ 660mA, 2A.If the emitter base voltage is kept at 9V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 4A.Collector current can be as low as 4A volts at its maximum.
BUL216 Features
the DC current gain for this device is 12 @ 400mA 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 3V @ 660mA, 2A
the emitter base voltage is kept at 9V
the current rating of this device is 4A
BUL216 Applications
There are a lot of STMicroelectronics
BUL216 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 12 @ 400mA 5V.With a collector emitter saturation voltage of 1V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 3V @ 660mA, 2A.If the emitter base voltage is kept at 9V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 4A.Collector current can be as low as 4A volts at its maximum.
BUL216 Features
the DC current gain for this device is 12 @ 400mA 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 3V @ 660mA, 2A
the emitter base voltage is kept at 9V
the current rating of this device is 4A
BUL216 Applications
There are a lot of STMicroelectronics
BUL216 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BUL216 More Descriptions
Transistor General Purpose BJT NPN 800 Volt 4 Amp 3-Pin 3 Tab TO-220 Tube
TRANS NPN 800V 4A TO-220 / Trans GP BJT NPN 800V 4A 9000mW 3-Pin(3 Tab) TO-220AB Tube
800V 90W 4A 12@400mA5V 3V@2A660mA NPN 150¡Í@(Tj) TO-220 Bipolar Transistors - BJT ROHS
Power Bipolar Transistor, 4A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Transistor NPN, TO-220AB 800V 4AThrough Hole
Power Bipolar, NPN, 5V, 660mA, TO-220, TubeSTMicroelectronics SCT
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
TRANSISTOR, NPN, TO-220; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 800V; Transition Frequency ft: -; Power Dissipation Pd: 90W; DC Collector Current: 2A; DC Current Gain hFE: 40hFE; Transistor Case Style: TO
TRANS NPN 800V 4A TO-220 / Trans GP BJT NPN 800V 4A 9000mW 3-Pin(3 Tab) TO-220AB Tube
800V 90W 4A 12@400mA5V 3V@2A660mA NPN 150¡Í@(Tj) TO-220 Bipolar Transistors - BJT ROHS
Power Bipolar Transistor, 4A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Transistor NPN, TO-220AB 800V 4AThrough Hole
Power Bipolar, NPN, 5V, 660mA, TO-220, TubeSTMicroelectronics SCT
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
TRANSISTOR, NPN, TO-220; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 800V; Transition Frequency ft: -; Power Dissipation Pd: 90W; DC Collector Current: 2A; DC Current Gain hFE: 40hFE; Transistor Case Style: TO
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