BUB941ZTT4

STMicroelectronics BUB941ZTT4

Part Number:
BUB941ZTT4
Manufacturer:
STMicroelectronics
Ventron No:
3068941-BUB941ZTT4
Description:
TRANS NPN DARL 350V 15A D2PAK
ECAD Model:
Datasheet:
BUB941ZTT4

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Specifications
STMicroelectronics BUB941ZTT4 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics BUB941ZTT4.
  • Factory Lead Time
    8 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    175°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    Automotive
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    350V
  • Max Power Dissipation
    150W
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    245
  • Current Rating
    15A
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Base Part Number
    BUB941
  • Pin Count
    4
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Polarity
    NPN
  • Element Configuration
    Single
  • Power Dissipation
    150W
  • Case Connection
    COLLECTOR
  • Transistor Application
    AMPLIFIER
  • Transistor Type
    NPN - Darlington
  • Collector Emitter Voltage (VCEO)
    350V
  • Max Collector Current
    15A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    300 @ 5A 10V
  • Current - Collector Cutoff (Max)
    100μA
  • Vce Saturation (Max) @ Ib, Ic
    1.8V @ 250mA, 10A
  • Collector Emitter Breakdown Voltage
    350V
  • Collector Emitter Saturation Voltage
    1.8V
  • Max Breakdown Voltage
    350V
  • Collector Base Voltage (VCBO)
    5V
  • Emitter Base Voltage (VEBO)
    5V
  • hFE Min
    300
  • Continuous Collector Current
    15A
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
BUB941ZTT4 Overview
This device has a DC current gain of 300 @ 5A 10V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 1.8V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A constant collector voltage of 15A is necessary for high efficiency.The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 15A.As a result, it can handle voltages as low as 350V volts.The maximum collector current is 15A volts.

BUB941ZTT4 Features
the DC current gain for this device is 300 @ 5A 10V
a collector emitter saturation voltage of 1.8V
the vce saturation(Max) is 1.8V @ 250mA, 10A
the emitter base voltage is kept at 5V
the current rating of this device is 15A


BUB941ZTT4 Applications
There are a lot of STMicroelectronics
BUB941ZTT4 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
BUB941ZTT4 More Descriptions
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TEXAS INSTRUMENTS TPA6135A2RTET Audio Power Amplifier, AB, 2, 25 mW, 2.3V to 5.5V, QFN, 16 Pins
NPN-TRANSISTOR 350V 15A TO263 RoHSconf
TRANSISTOR, NPN, 350V, 15A, TO-263-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 350V; Transition Frequency ft: -; Power Dissipation Pd: 150W; DC Collector Current: 15A; DC Current Gain hFE: 300hFE; Transist
Darlington Transistor, Npn, 350V, 15A, To-263, Full Reel; Transistor Polarity:Npn; Collector Emitter Voltage Max:350V; Continuous Collector Current:15A; Power Dissipation:150W; Transistor Mounting:Surface Mount; No. Of Pins:3Pins Rohs Compliant: Yes |Stmicroelectronics BUB941ZTT4
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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