Diodes Incorporated BST52TA

Name: BST52TA
Brand: Diodes Incorporated
SKU: 3585297-BST52TA
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BST52TA

Manufacturer:: Diodes Incorporated

Ventron No:: 3585297-BST52TA

Description:: TRANS NPN DARL 80V 0.5A SOT-89

ECAD Model:

Datasheet:: BST52TA

Specifications

Diodes Incorporated BST52TA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated BST52TA.

Factory Lead Time
15 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
3
Weight
51.993025mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
SMD/SMT
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
80V
Max Power Dissipation
1W
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Current Rating
500mA
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
BST52
Pin Count
3
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Power Dissipation
1W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 150mA 10V
Current - Collector Cutoff (Max)
10μA
Vce Saturation (Max) @ Ib, Ic
1.3V @ 500μA, 500mA
Collector Emitter Breakdown Voltage
80V
Transition Frequency
150MHz
Collector Emitter Saturation Voltage
1.3V
Max Breakdown Voltage
80V
Collector Base Voltage (VCBO)
90V
Emitter Base Voltage (VEBO)
10V
hFE Min
2000
Continuous Collector Current
500mA
Height
1.5mm
Length
4.5mm
Width
2.5mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BST52TA Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 1000 @ 150mA 10V DC current gain.As it features a collector emitter saturation voltage of 1.3V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at 500mA.Keeping the emitter base voltage at 10V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 150MHz in the part.Single BJT transistor can be broken down at a voltage of 80V volts.When collector current reaches its maximum, it can reach 500mA volts.

BST52TA Features
the DC current gain for this device is 1000 @ 150mA 10V
a collector emitter saturation voltage of 1.3V
the vce saturation(Max) is 1.3V @ 500μA, 500mA
the emitter base voltage is kept at 10V
the current rating of this device is 500mA
a transition frequency of 150MHz

BST52TA Applications
There are a lot of Diodes Incorporated
BST52TA applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BST52TA More Descriptions

BST52 Series 80 V 500 mA NPN Silicon Planar Darlington Transistor - SOT-89-3
Trans Darlington NPN 80V 0.5A 1000mW Automotive 4-Pin(3 Tab) SOT-89 T/R
Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon
DARLINGTON TRANSISTOR, NPN, SOT-89; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Power Dissipation Pd:1W; DC Collector Current:500mA; DC Current Gain hFE:2000; Operating Temperature Range:-65°C to 150°C; Transistor Case Style:SOT-89; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Av Current Ic:500mA; Collector Emitter Voltage Vces:1.3V; Continuous Collector Current Ic Max:500mA; Current Ic @ Vce Sat:500mA; Current Ic Continuous a Max:500mA; Current Ic hFE:500mA; Full Power Rating Temperature:25°C; Hfe Min:2000; No. of Transistors:1; Package / Case:SOT-89; Power Dissipation Pd:1W; Power Dissipation Ptot Max:1W; Pulsed Current Icm:1.5A; Termination Type:SMD; Transistor Type:Darlington; Voltage Vcbo:90V

Product Comparison

The three parts on the right have similar specifications to BST52TA.

Image

Part Number

Manufacturer

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Termination

ECCN Code

Subcategory

Voltage - Rated DC

Max Power Dissipation

Terminal Form

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Number of Elements

Polarity

Element Configuration

Power Dissipation

Case Connection

Transistor Application

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Transition Frequency

Collector Emitter Saturation Voltage

Max Breakdown Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

Continuous Collector Current

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Series

JESD-30 Code

Power - Max

Frequency - Transition

Surface Mount

Terminal Finish

Terminal Position

Qualification Status

Configuration

Max Junction Temperature (Tj)

Ambient Temperature Range High

Turn On Time-Max (ton)

Supplier Device Package

Max Operating Temperature

Min Operating Temperature

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

View Compare
BST52TA

Diodes Incorporated

15 Weeks

Tin

Surface Mount

Surface Mount

TO-243AA

3

51.993025mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2006

e3

yes

Active

1 (Unlimited)

3

SMD/SMT

EAR99

Other Transistors

80V

1W

FLAT

260

500mA

40

BST52

3

1

NPN

Single

1W

COLLECTOR

SWITCHING

NPN - Darlington

80V

500mA

1000 @ 150mA 10V

10μA

1.3V @ 500μA, 500mA

80V

150MHz

1.3V

80V

90V

10V

2000

500mA

1.5mm

4.5mm

2.5mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
BST51,135

Nexperia USA Inc.

4 Weeks

Tin

Surface Mount

Surface Mount

TO-243AA

4

-

SILICON

150°C TJ

Tape & Reel (TR)

2001

e3

-

Active

1 (Unlimited)

3

-

EAR99

-

-

1.3W

FLAT

-

-

-

BST51

3

1

NPN

Single

-

COLLECTOR

SWITCHING

NPN - Darlington

60V

1A

2000 @ 500mA 10V

50nA

1.3V @ 500μA, 500mA

60V

200MHz

1.3V

60V

80V

5V

-

-

-

-

-

-

No

ROHS3 Compliant

-

Automotive, AEC-Q101

R-PSSO-F3

1.3W

200MHz

-

-

-

-

-

-

-

-

-

-

-

-

-

BST52TA vs BST51,135
BST52,115

Nexperia USA Inc.

4 Weeks

-

-

Surface Mount

TO-243AA

3

-

SILICON

150°C TJ

Tape & Reel (TR)

2001

e3

-

Active

1 (Unlimited)

3

-

EAR99

-

-

-

FLAT

NOT SPECIFIED

-

NOT SPECIFIED

BST52

3

1

NPN

-

1.3W

COLLECTOR

SWITCHING

NPN - Darlington

80V

1A

2000 @ 500mA 10V

50nA

1.3V @ 500μA, 500mA

80V

200MHz

1.3V

-

90V

5V

1000

-

1.6mm

-

-

-

-

ROHS3 Compliant

-

Automotive, AEC-Q101

-

-

200MHz

YES

Tin (Sn)

SINGLE

Not Qualified

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

150°C

150°C

400ns

-

-

-

-

-

BST52TA vs BST52,115
BST50,115

Nexperia USA Inc.

4 Weeks

Tin

Surface Mount

Surface Mount

TO-243AA

3

130.492855mg

-

150°C TJ

Tape & Reel (TR)

2001

-

-

Active

1 (Unlimited)

-

-

-

-

-

1.3W

-

-

-

-

BST50

-

1

NPN

Single

1.3W

-

-

NPN - Darlington

45V

1A

2000 @ 500mA 10V

50nA

1.3V @ 500μA, 500mA

45V

-

1.3V

45V

60V

5V

-

-

1.6mm

4.6mm

2.6mm

No SVHC

No

ROHS3 Compliant

Lead Free

Automotive, AEC-Q101

-

1.3W

200MHz

-

-

-

-

-

-

-

-

SOT-89

150°C

-65°C

45V

1A

BST52TA vs BST50,115