Fairchild/ON Semiconductor BSS64

BSS64 Overview
In this device, the DC current gain is 20 @ 10mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 200mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 200mV @ 15mA, 50mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -200mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 60MHz.Input voltage breakdown is available at 80V volts.Single BJT transistor is possible for the collector current to fall as low as 200mA volts at Single BJT transistors maximum.

BSS64 Features
the DC current gain for this device is 20 @ 10mA 1V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 200mV @ 15mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is -200mA
a transition frequency of 60MHz


BSS64 Applications
There are a lot of ON Semiconductor
BSS64 applications of single BJT transistors.


Inverter
Interface
Driver
Muting