Infineon Technologies BSP60E6327HTSA1

Name: BSP60E6327HTSA1
Brand: Infineon Technologies
SKU: 3585578-BSP60E6327HTSA1
Availability: InStock
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Part Number:: BSP60E6327HTSA1

Manufacturer:: Infineon Technologies

Ventron No:: 3585578-BSP60E6327HTSA1

Description:: TRANS PNP DARL 45V 1A SOT-223

ECAD Model:

Datasheet:: BSP60E6327HTSA1

Specifications

Infineon Technologies BSP60E6327HTSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BSP60E6327HTSA1.

Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
4
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2011
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Max Power Dissipation
1.5W
Terminal Position
DUAL
Terminal Form
GULL WING
Base Part Number
BSP60
Pin Count
4
Number of Elements
1
Polarity
PNP
Configuration
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Case Connection
COLLECTOR
Power - Max
1.5W
Transistor Application
SWITCHING
Transistor Type
PNP - Darlington
Collector Emitter Voltage (VCEO)
45V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
2000 @ 500mA 10V
Current - Collector Cutoff (Max)
10μA
Vce Saturation (Max) @ Ib, Ic
1.8V @ 1mA, 1A
Collector Emitter Breakdown Voltage
45V
Transition Frequency
200MHz
Collector Emitter Saturation Voltage
1.8V
Frequency - Transition
200MHz
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
5V
hFE Min
2000
Radiation Hardening
No
RoHS Status
RoHS Compliant

Description

BSP60E6327HTSA1 Overview
In this device, the DC current gain is 2000 @ 500mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 1.8V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.8V @ 1mA, 1A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.200MHz is present in the transition frequency.Maximum collector currents can be below 1A volts.

BSP60E6327HTSA1 Features
the DC current gain for this device is 2000 @ 500mA 10V
a collector emitter saturation voltage of 1.8V
the vce saturation(Max) is 1.8V @ 1mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 200MHz

BSP60E6327HTSA1 Applications
There are a lot of Infineon Technologies
BSP60E6327HTSA1 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BSP60E6327HTSA1 More Descriptions

Trans Darlington PNP 45V 1A 4-Pin(3 Tab) SOT-223 T/R
PNP DARLINGTON 45V 1A SOT223
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SILICON DISCRETE COMPONENTS

Certification