ON Semiconductor BSP16T1G

BSP16T1G Overview
DC current gain in this device equals 30 @ 50mA 10V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -2V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 2V @ 5mA, 50mA.An emitter's base voltage can be kept at 6V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -1A current rating.As a result, the part has a transition frequency of 15MHz.Breakdown input voltage is 40V volts.In extreme cases, the collector current can be as low as 100mA volts.

BSP16T1G Features
the DC current gain for this device is 30 @ 50mA 10V
a collector emitter saturation voltage of -2V
the vce saturation(Max) is 2V @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is -1A
a transition frequency of 15MHz


BSP16T1G Applications
There are a lot of ON Semiconductor
BSP16T1G applications of single BJT transistors.


Inverter
Interface
Driver
Muting