Infineon Technologies BSD840NH6327XTSA1

Name: BSD840NH6327XTSA1
Brand: Infineon Technologies
SKU: 2847614-BSD840NH6327XTSA1
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BSD840NH6327XTSA1

Manufacturer:: Infineon Technologies

Ventron No:: 2847614-BSD840NH6327XTSA1

Description:: MOSFET 2N-CH 20V 0.88A SOT363

ECAD Model:

Datasheet:: BSD840NH6327XTSA1

Specifications

Infineon Technologies BSD840NH6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BSD840NH6327XTSA1.

Factory Lead Time
10 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
6-VSSOP, SC-88, SOT-363
Number of Pins
6
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
OptiMOS™
Published
2011
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Additional Feature
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Max Power Dissipation
500mW
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
BSD840
Pin Count
6
Number of Elements
2
Number of Channels
2
Operating Mode
ENHANCEMENT MODE
Power Dissipation
500mW
Turn On Delay Time
1.9 ns
FET Type
2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs
400m Ω @ 880mA, 2.5V
Vgs(th) (Max) @ Id
750mV @ 1.6μA
Halogen Free
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
78pF @ 10V
Gate Charge (Qg) (Max) @ Vgs
0.26nC @ 2.5V
Rise Time
2.2ns
Turn-Off Delay Time
7.8 ns
Continuous Drain Current (ID)
880mA
Threshold Voltage
550mV
Gate to Source Voltage (Vgs)
8V
Max Dual Supply Voltage
20V
Drain Current-Max (Abs) (ID)
3.5A
Drain-source On Resistance-Max
0.4Ohm
Drain to Source Breakdown Voltage
20V
FET Technology
METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj)
150°C
FET Feature
Logic Level Gate
Height
1mm
Length
2mm
Width
1.25mm
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BSD840NH6327XTSA1 Description
Small signal transistors are transistors used to amplify low-level signals, but they can also be used as switches. The typical IC values of small signal transistors are between 10 and 500, and the maximum HFE rating is between 80 and 600 mA. They come in two forms: NPN and PNP. BSD840NH6327XTSA1 Features ? Dual N-channel ? Enhancement mode ? Ultra Logic level (1.8V rated) ? Avalanche rated ? Qualified according to AEC Q101 ? 100% lead-free; RoHS compliant ? Halogen-free according to IEC61249-2-21 BSD840NH6327XTSA1 Applications Switches

BSD840NH6327XTSA1 More Descriptions

Transistor MOSFET Array Dual N-CH 20V 0.88A 6-Pin SOT-363 T/R - Tape and Reel
Dual N-Channel 20 V 400 mOhm 0.26 nC OptiMOS Small Signal Mosfet - SOT-363
Mosfet, Dual N-Ch, 20V, 0.88A, Sot-363; Channel Type:N Channel; Drain Source Voltage Vds N Channel:20V; Drain Source Voltage Vds P Channel:20V; Continuous Drain Current Id N Channel:880Ma; Continuous Drain Current Id P Channel:880Ma Rohs Compliant: Yes |Infineon BSD840NH6327XTSA1
All Small Signal n-channel products are suitable for automotive applications (excluding 2N7002). | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Qualified according to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Onboard charger; Telecom

Certification