Nexperia USA Inc. BFS19,215
- Part Number:
- BFS19,215
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 3585157-BFS19,215
- Description:
- TRANS NPN 20V 0.03A SOT23
- Datasheet:
- BFS19,215
Nexperia USA Inc. BFS19,215 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BFS19,215.
- Factory Lead Time4 Weeks
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- SeriesAutomotive, AEC-Q101
- Published2009
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- HTS Code8541.21.00.75
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberBFS19
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- PolarityNPN, PNP
- ConfigurationSINGLE
- Power - Max250mW
- Transistor TypeNPN
- DC Current Gain (hFE) (Min) @ Ic, Vce65 @ 1mA 10V
- Current - Collector Cutoff (Max)100nA ICBO
- Voltage - Collector Emitter Breakdown (Max)20V
- Current - Collector (Ic) (Max)30mA
- Transition Frequency260MHz
- Frequency - Transition260MHz
- RoHS StatusROHS3 Compliant
BFS19,215 Overview
This device has a DC current gain of 65 @ 1mA 10V, which is the ratio between the collector current and the base current.In this part, there is a transition frequency of 260MHz.Detection of Collector Emitter Breakdown at 20V maximal voltage is present.
BFS19,215 Features
the DC current gain for this device is 65 @ 1mA 10V
a transition frequency of 260MHz
BFS19,215 Applications
There are a lot of Nexperia USA Inc.
BFS19,215 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 65 @ 1mA 10V, which is the ratio between the collector current and the base current.In this part, there is a transition frequency of 260MHz.Detection of Collector Emitter Breakdown at 20V maximal voltage is present.
BFS19,215 Features
the DC current gain for this device is 65 @ 1mA 10V
a transition frequency of 260MHz
BFS19,215 Applications
There are a lot of Nexperia USA Inc.
BFS19,215 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BFS19,215 More Descriptions
Small Signal Bipolar Transistor, 0.03A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
Trans GP BJT NPN 20V 0.03A 250mW Automotive 3-Pin SOT-23 T/R
BFS19 Series NPN 250 mW 20 V 30 mA Surface Mount RF Transistor - SOT-23
20V 250mW 30mA 65@1mA,10V 260MHz NPN 150¡æ@(Tj) SOT-23(SOT-23-3) Bipolar Transistors - BJT ROHS
BFS19 - NPN medium frequency transistor
Trans GP BJT NPN 20V 0.03A 250mW Automotive 3-Pin SOT-23 T/R
BFS19 Series NPN 250 mW 20 V 30 mA Surface Mount RF Transistor - SOT-23
20V 250mW 30mA 65@1mA,10V 260MHz NPN 150¡æ@(Tj) SOT-23(SOT-23-3) Bipolar Transistors - BJT ROHS
BFS19 - NPN medium frequency transistor
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