NXP USA Inc. BFR30,235
- Part Number:
- BFR30,235
- Manufacturer:
- NXP USA Inc.
- Ventron No:
- 2495801-BFR30,235
- Description:
- JFET N-CH 10MA 250MW SOT23
- ECAD Model:
-
- Datasheet:
- BFR30,31
NXP USA Inc. BFR30,235 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. BFR30,235.
- Factory Lead Time8 Weeks
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published1997
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Base Part NumberBFR30
- Pin Count3
- Power - Max250mW
- FET TypeN-Channel
- Input Capacitance (Ciss) (Max) @ Vds4pF @ 10V
- Drain to Source Voltage (Vdss)25V
- Source Url Status Check Date2013-06-14 00:00:00
- Current - Drain (Idss) @ Vds (Vgs=0)4mA @ 10V
- Voltage - Cutoff (VGS off) @ Id5V @ 0.5nA
- Current Drain (Id) - Max10mA
- RoHS StatusROHS3 Compliant
BFR30,235 Description
BFR30,235 is a ±25V Planar epitaxial symmetrical junction N-channel field-effect transistor in a plastic SOT23 package. The NXP BFR30,235 can be applied in Low-level general-purpose amplifiers in thick and thin-film circuits. The Operating and Storage Temperature Range is between -65 and 150℃. And the transistor BFR30,235 is in the SOT23 package with 250mW power dissipation.
BFR30,235 Features
drain-source voltage: ±25V gate-source voltage: -25V drain current: 10mA forward gate current (DC): 5mA storage temperature: -65~150℃
BFR30,235 Applications
Automotive Advanced driver assistance systems (ADAS) Industrial Building automation Enterprise systems Enterprise projectors
BFR30,235 is a ±25V Planar epitaxial symmetrical junction N-channel field-effect transistor in a plastic SOT23 package. The NXP BFR30,235 can be applied in Low-level general-purpose amplifiers in thick and thin-film circuits. The Operating and Storage Temperature Range is between -65 and 150℃. And the transistor BFR30,235 is in the SOT23 package with 250mW power dissipation.
BFR30,235 Features
drain-source voltage: ±25V gate-source voltage: -25V drain current: 10mA forward gate current (DC): 5mA storage temperature: -65~150℃
BFR30,235 Applications
Automotive Advanced driver assistance systems (ADAS) Industrial Building automation Enterprise systems Enterprise projectors
BFR30,235 More Descriptions
Trans JFET N-CH 25V 10mA 3-Pin TO-236AB T/R
RF JFET Transistors N-Channel Single ' /- 25V 10mA
Conv DC-DC Single Step Down 8V to 42V 16-Pin VQFN Tray
RF SMALL SIGNAL TRANSISTOR MOSFET
RF JFET Transistors N-Channel Single ' /- 25V 10mA
Conv DC-DC Single Step Down 8V to 42V 16-Pin VQFN Tray
RF SMALL SIGNAL TRANSISTOR MOSFET
-
BFR31LT1G datasheet pdf and Transistors - JFETs product details from ON Semiconductor stock available at Ventron
-
BFR30LT1G datasheet pdf and Transistors - JFETs product details from ON Semiconductor stock available at Ventron
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