Infineon Technologies BFN38E6327HTSA1

Name: BFN38E6327HTSA1
Brand: Infineon Technologies
SKU: 3585570-BFN38E6327HTSA1
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BFN38E6327HTSA1

Manufacturer:: Infineon Technologies

Ventron No:: 3585570-BFN38E6327HTSA1

Description:: TRANS NPN 300V 0.2A SOT-223

ECAD Model:

Datasheet:: BFN38E6327HTSA1

Specifications

Infineon Technologies BFN38E6327HTSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BFN38E6327HTSA1.

Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Supplier Device Package
PG-SOT223-4
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
1.5W
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 30mA 10V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 2mA, 20mA
Voltage - Collector Emitter Breakdown (Max)
300V
Current - Collector (Ic) (Max)
200mA
Frequency - Transition
70MHz
RoHS Status
ROHS3 Compliant

Description

BFN38E6327HTSA1 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 30 @ 30mA 10V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 2mA, 20mA.This product comes in a PG-SOT223-4 device package from the supplier.Device displays Collector Emitter Breakdown (300V maximal voltage).

BFN38E6327HTSA1 Features
the DC current gain for this device is 30 @ 30mA 10V
the vce saturation(Max) is 500mV @ 2mA, 20mA
the supplier device package of PG-SOT223-4

BFN38E6327HTSA1 Applications
There are a lot of Rochester Electronics, LLC
BFN38E6327HTSA1 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BFN38E6327HTSA1 More Descriptions

Trans GP BJT NPN 300V 0.2A Automotive 4-Pin(3 Tab) SOT-223 T/R
NPN High Voltage Transistor, SOT223, RoHSInfineon SCT
SMALL SIGNAL BIPOLAR TRANSISTOR

Certification