ON Semiconductor BF245B
- Part Number:
- BF245B
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2476998-BF245B
- Description:
- JFET N-CH 30V 100MA TO92
- ECAD Model:
-
- Datasheet:
- BF245A,B,C
ON Semiconductor BF245B technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BF245B.
- Voltage - Test:-
- Voltage - Rated:30V
- Transistor Type:N-Channel JFET
- Supplier Device Package:TO-92-3
- Series:-
- Power - Output:-
- Packaging:Bulk
- Package / Case:TO-226-3, TO-92-3 (TO-226AA)
- Noise Figure:-
- Gain:-
- Frequency:-
- Current Rating:100mA
- Current - Test:-
Images are for reference only.See Product Specifications for product details.If you are interested to buy AMI Semiconductor / ON Semiconductor BF245B.
BF245B More Descriptions
N-Channel Amplifiers / JFET N-CH 30V 15MA TO92
RF JFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:15mA; Power Dissipation, Pd:0.350W; Package/Case:TO-92; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Breakdown Voltage, V(br)gss:-30V ;RoHS Compliant: Yes
TRANSISTOR, JFET, N, TO-92; Transistor Type:JFET; Breakdown Voltage Vbr:-30V; Zero Gate Voltage Drain Current Idss:6mA to 15mA; Gate-Source Cutoff Voltage Vgs(off) Max:8V; Power Dissipation Pd:350mW; Transistor Case Style:TO-92; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Application Code:HFA; Current Idss Max:15mA; Current Idss Min:6mA; Current Ig:10mA; Device Marking:BF245B; Drain Source Voltage Vds:30V; Forward Transconductance Gfs Max:6.5mA/V; Full Power Rating Temperature:25°C; Gfs Min:3mA/V; No. of Transistors:1; Package / Case:TO-92; Pin Configuration:r; Pin Format:r; Power Dissipation Pd:350mW; Power Dissipation Ptot Max:350mW; Termination Type:Through Hole; Transistor Polarity:N Channel
RF JFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:15mA; Power Dissipation, Pd:0.350W; Package/Case:TO-92; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Breakdown Voltage, V(br)gss:-30V ;RoHS Compliant: Yes
TRANSISTOR, JFET, N, TO-92; Transistor Type:JFET; Breakdown Voltage Vbr:-30V; Zero Gate Voltage Drain Current Idss:6mA to 15mA; Gate-Source Cutoff Voltage Vgs(off) Max:8V; Power Dissipation Pd:350mW; Transistor Case Style:TO-92; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Application Code:HFA; Current Idss Max:15mA; Current Idss Min:6mA; Current Ig:10mA; Device Marking:BF245B; Drain Source Voltage Vds:30V; Forward Transconductance Gfs Max:6.5mA/V; Full Power Rating Temperature:25°C; Gfs Min:3mA/V; No. of Transistors:1; Package / Case:TO-92; Pin Configuration:r; Pin Format:r; Power Dissipation Pd:350mW; Power Dissipation Ptot Max:350mW; Termination Type:Through Hole; Transistor Polarity:N Channel
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