Fairchild/ON Semiconductor BF245A
- Part Number:
- BF245A
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2476140-BF245A
- Description:
- JFET N-CH 30V 6.5MA TO92
- Datasheet:
- BF245A,B,C
Fairchild/ON Semiconductor BF245A technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor BF245A.
- Lifecycle StatusOBSOLETE (Last Updated: 6 days ago)
- MountThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA)
- Number of Pins3
- Weight200mg
- PackagingBulk
- Published2003
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- TerminationThrough Hole
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- HTS Code8541.21.00.75
- SubcategoryOther Transistors
- Voltage - Rated DC30V
- Current Rating (Amps)100mA
- Max Power Dissipation350mW
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)240
- Reach Compliance Codenot_compliant
- Current Rating10mA
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberBF245
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- Element ConfigurationSingle
- Operating ModeDEPLETION MODE
- Power Dissipation350mW
- Transistor ApplicationAMPLIFIER
- Breakdown Voltage-30V
- Drain to Source Voltage (Vdss)15V
- Transistor TypeN-Channel JFET
- Continuous Drain Current (ID)6.5mA
- Gate to Source Voltage (Vgs)30V
- Drain Current-Max (Abs) (ID)0.1A
- Drain to Source Breakdown Voltage30V
- FET TechnologyJUNCTION
- Highest Frequency BandULTRA HIGH FREQUENCY B
- Height5.33mm
- Length5.2mm
- Width4.19mm
- REACH SVHCNo SVHC
- RoHS StatusNon-RoHS Compliant
- Lead FreeLead Free
BF245A Description
The BF245A JFET is an N-Channel Amplifier designed for VHF/UHF amplifiers.
BF245A Features
Large Forward Transfer Admittance
Small Ciss
Ultralow noise figure
BF245A Applications
New Energy Vehicles, Photovoltaic & Wind Power Generation, Smart Grid
The BF245A JFET is an N-Channel Amplifier designed for VHF/UHF amplifiers.
BF245A Features
Large Forward Transfer Admittance
Small Ciss
Ultralow noise figure
BF245A Applications
New Energy Vehicles, Photovoltaic & Wind Power Generation, Smart Grid
BF245A More Descriptions
N-Channel Amplifiers / JFET N-CH 30V 6.5MA TO92
RF JFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:6.5mA; Power Dissipation, Pd:0.350W; Package/Case:TO-92; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Breakdown Voltage, V(br)gss:-30V ;RoHS Compliant: Yes
TRANSISTOR, JFET, N, TO-92; Transistor Type:JFET; Breakdown Voltage Vbr:-30V; Zero Gate Voltage Drain Current Idss:2mA to 6.5mA; Gate-Source Cutoff Voltage Vgs(off) Max:8V; Power Dissipation Pd:350mW; Transistor Case Style:TO-92; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Application Code:HFA; Current Idss Max:6.5mA; Current Idss Min:2mA; Current Ig:10mA; Device Marking:BF245A; Drain Source Voltage Vds:30V; Forward Transconductance Gfs Max:6.5mA/V; Full Power Rating Temperature:25°C; Gfs Min:3mA/V; No. of Transistors:1; Package / Case:TO-92; Pin Configuration:r; Pin Format:r; Power Dissipation Pd:350mW; Power Dissipation Ptot Max:350mW; Termination Type:Through Hole; Transistor Polarity:N Channel
RF JFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:6.5mA; Power Dissipation, Pd:0.350W; Package/Case:TO-92; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Breakdown Voltage, V(br)gss:-30V ;RoHS Compliant: Yes
TRANSISTOR, JFET, N, TO-92; Transistor Type:JFET; Breakdown Voltage Vbr:-30V; Zero Gate Voltage Drain Current Idss:2mA to 6.5mA; Gate-Source Cutoff Voltage Vgs(off) Max:8V; Power Dissipation Pd:350mW; Transistor Case Style:TO-92; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Application Code:HFA; Current Idss Max:6.5mA; Current Idss Min:2mA; Current Ig:10mA; Device Marking:BF245A; Drain Source Voltage Vds:30V; Forward Transconductance Gfs Max:6.5mA/V; Full Power Rating Temperature:25°C; Gfs Min:3mA/V; No. of Transistors:1; Package / Case:TO-92; Pin Configuration:r; Pin Format:r; Power Dissipation Pd:350mW; Power Dissipation Ptot Max:350mW; Termination Type:Through Hole; Transistor Polarity:N Channel
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