NXP USA Inc. BF1211,215
- Part Number:
- BF1211,215
- Manufacturer:
- NXP USA Inc.
- Ventron No:
- 2848150-BF1211,215
- Description:
- MOSFET N-CH DUAL GATE 6V SOT143B
- Datasheet:
- BF1211(R,WR)
NXP USA Inc. BF1211,215 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. BF1211,215.
- Package / CaseTO-253-4, TO-253AA
- Surface MountYES
- Transistor Element MaterialSILICON
- PackagingTape & Reel (TR)
- Published2003
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Voltage - Rated6V
- Additional FeatureLOW NOISE
- HTS Code8541.21.00.75
- SubcategoryFET General Purpose Power
- Current Rating (Amps)30mA
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Reach Compliance Codeunknown
- Frequency400MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberBF1211
- Pin Count4
- JESD-30 CodeR-PDSO-G4
- Qualification StatusNot Qualified
- Operating Temperature (Max)150°C
- Number of Elements2
- ConfigurationCOMPLEX
- Operating ModeDUAL GATE, ENHANCEMENT MODE
- Case ConnectionSOURCE
- Current - Test15mA
- Transistor ApplicationAMPLIFIER
- Transistor TypeN-Channel Dual Gate
- Gain29dB
- Drain Current-Max (Abs) (ID)0.03A
- DS Breakdown Voltage-Min6V
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Power Dissipation-Max (Abs)0.18W
- Noise Figure0.9dB
- Voltage - Test5V
- Feedback Cap-Max (Crss)0.03 pF
- RoHS StatusROHS3 Compliant
BF1211,215 Overview
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet BF1211,215 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of BF1211,215. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet BF1211,215 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of BF1211,215. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
BF1211,215 More Descriptions
Trans RF MOSFET N-CH 6V 0.03A 4-Pin(3 Tab) SOT-143B T/R
MOSFET N-CH DUAL GATE 6V SOT143B
MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:30mA; Drain Source Voltage, Vds:6V; Power Dissipation, Pd:180mW; No. of Pins:4 ;RoHS Compliant: Yes
MOSFET N-CH DUAL GATE 6V SOT143B
MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:30mA; Drain Source Voltage, Vds:6V; Power Dissipation, Pd:180mW; No. of Pins:4 ;RoHS Compliant: Yes
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