Bourns Inc. BDW94C-S
- Part Number:
- BDW94C-S
- Manufacturer:
- Bourns Inc.
- Ventron No:
- 2469560-BDW94C-S
- Description:
- TRANS PNP DARL 100V 12A
- Datasheet:
- BDW94x
Bourns Inc. BDW94C-S technical specifications, attributes, parameters and parts with similar specifications to Bourns Inc. BDW94C-S.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Supplier Device PackageTO-220
- Operating Temperature-65°C~150°C TJ
- PackagingTube
- Published1993
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature150°C
- Min Operating Temperature-65°C
- Max Power Dissipation2W
- Base Part NumberBDW94
- Number of Elements1
- PolarityPNP
- Element ConfigurationSingle
- Power - Max2W
- Transistor TypePNP - Darlington
- Collector Emitter Voltage (VCEO)100V
- Max Collector Current12A
- DC Current Gain (hFE) (Min) @ Ic, Vce750 @ 5A 3V
- Current - Collector Cutoff (Max)1mA
- Vce Saturation (Max) @ Ib, Ic3V @ 100mA, 10A
- Collector Emitter Breakdown Voltage100V
- Voltage - Collector Emitter Breakdown (Max)100V
- Current - Collector (Ic) (Max)12A
- Collector Emitter Saturation Voltage2V
- Collector Base Voltage (VCBO)100V
- Emitter Base Voltage (VEBO)5V
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
BDW94C-S Overview
In this device, the DC current gain is 750 @ 5A 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 2V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 3V @ 100mA, 10A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.Supplier device package TO-220 comes with the product.The device exhibits a collector-emitter breakdown at 100V.Maximum collector currents can be below 12A volts.
BDW94C-S Features
the DC current gain for this device is 750 @ 5A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 100mA, 10A
the emitter base voltage is kept at 5V
the supplier device package of TO-220
BDW94C-S Applications
There are a lot of Bourns Inc.
BDW94C-S applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 750 @ 5A 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 2V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 3V @ 100mA, 10A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.Supplier device package TO-220 comes with the product.The device exhibits a collector-emitter breakdown at 100V.Maximum collector currents can be below 12A volts.
BDW94C-S Features
the DC current gain for this device is 750 @ 5A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 100mA, 10A
the emitter base voltage is kept at 5V
the supplier device package of TO-220
BDW94C-S Applications
There are a lot of Bourns Inc.
BDW94C-S applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BDW94C-S More Descriptions
Trans Darlington PNP 100V 12A 3-Pin(3 Tab) TO-220
TRANS PNP DARL 100V 12A
Pnp Darlington 100V 10A
TRANS PNP DARL 100V 12A
Pnp Darlington 100V 10A
The three parts on the right have similar specifications to BDW94C-S.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureMax Power DissipationBase Part NumberNumber of ElementsPolarityElement ConfigurationPower - MaxTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Collector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)Radiation HardeningRoHS StatusTransistor Element MaterialJESD-609 CodePbfree CodeNumber of TerminationsECCN CodeTerminal FinishPin CountJESD-30 CodeCase ConnectionJEDEC-95 CodeView Compare
-
BDW94C-SThrough HoleThrough HoleTO-220-3TO-220-65°C~150°C TJTube1993Obsolete1 (Unlimited)150°C-65°C2WBDW941PNPSingle2WPNP - Darlington100V12A750 @ 5A 3V1mA3V @ 100mA, 10A100V100V12A2V100V5VNoROHS3 Compliant-----------
-
Through HoleThrough HoleTO-220-3TO-220-65°C~150°C TJTube1993Obsolete1 (Unlimited)150°C-65°C2WBDW941PNPSingle2WPNP - Darlington45V12A750 @ 5A 3V1mA3V @ 100mA, 10A45V45V12A2V45V5VNoROHS3 Compliant----------
-
Through HoleThrough HoleTO-220-3--65°C~150°C TJTube1993Obsolete1 (Unlimited)--2WBDW931NPNSingle2WNPN - Darlington80V12A750 @ 5A 3V1mA3V @ 100mA, 10A80V--2V80V5VNoROHS3 CompliantSILICONe1yes3EAR99TIN SILVER COPPER3R-PSFM-T3COLLECTORTO-220AB
-
Through HoleThrough HoleTO-220-3--65°C~150°C TJTube1993Obsolete1 (Unlimited)--2WBDW931NPNSingle2WNPN - Darlington45V12A750 @ 5A 3V1mA3V @ 100mA, 10A45V--2V45V5VNoROHS3 CompliantSILICONe1yes3EAR99TIN SILVER COPPER3R-PSFM-T3COLLECTORTO-220AB
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