ON Semiconductor BD810

Name: BD810
Brand: ON Semiconductor
SKU: 2468168-BD810
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BD810

Manufacturer:: ON Semiconductor

Ventron No:: 2468168-BD810

Description:: TRANS PNP 80V 10A TO-220AB

ECAD Model:

Datasheet:: BD810

Specifications

ON Semiconductor BD810 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BD810.

Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220AB
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
90W
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
15 @ 4A 2V
Current - Collector Cutoff (Max)
1mA ICBO
Vce Saturation (Max) @ Ib, Ic
1.1V @ 300mA, 3A
Voltage - Collector Emitter Breakdown (Max)
80V
Current - Collector (Ic) (Max)
10A
Frequency - Transition
1.5MHz
RoHS Status
Non-RoHS Compliant

Description

BD810 Overview
This device has a DC current gain of 15 @ 4A 2V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor comes in a supplier device package of TO-220AB.Detection of Collector Emitter Breakdown at 80V maximal voltage is present.

BD810 Features
the DC current gain for this device is 15 @ 4A 2V
the vce saturation(Max) is 1.1V @ 300mA, 3A
the supplier device package of TO-220AB

BD810 Applications
There are a lot of Rochester Electronics, LLC
BD810 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BD810 More Descriptions

Tube Through Hole PNP Single Bipolar (BJT) Transistor 15 @ 4A 2V 10A 90W 1.5MHz
Transistors Bipolar- General Purpose 10A, 80V, 90W PNP No-Cancel/No-Return
Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

Certification