ON Semiconductor BD787G
- Part Number:
- BD787G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2463439-BD787G
- Description:
- TRANS NPN 60V 4A TO-225
- Datasheet:
- BD787G
ON Semiconductor BD787G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BD787G.
- Lifecycle StatusACTIVE (Last Updated: 4 days ago)
- Factory Lead Time2 Weeks
- Contact PlatingTin
- Mounting TypeThrough Hole
- Package / CaseTO-225AA, TO-126-3
- Surface MountNO
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingBulk
- Published2006
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC60V
- Max Power Dissipation15W
- Peak Reflow Temperature (Cel)260
- Current Rating4A
- Frequency50MHz
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation15W
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product50MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)60V
- Max Collector Current4A
- DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 200mA 3V
- Current - Collector Cutoff (Max)100μA
- Vce Saturation (Max) @ Ib, Ic2.5V @ 800mA, 4A
- Collector Emitter Breakdown Voltage60V
- Transition Frequency50MHz
- Collector Emitter Saturation Voltage400mV
- Collector Base Voltage (VCBO)80V
- Emitter Base Voltage (VEBO)6V
- hFE Min40
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
BD787G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 40 @ 200mA 3V DC current gain.As it features a collector emitter saturation voltage of 400mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 50MHz in the part.When collector current reaches its maximum, it can reach 4A volts.
BD787G Features
the DC current gain for this device is 40 @ 200mA 3V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 2.5V @ 800mA, 4A
the emitter base voltage is kept at 6V
the current rating of this device is 4A
a transition frequency of 50MHz
BD787G Applications
There are a lot of ON Semiconductor
BD787G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 40 @ 200mA 3V DC current gain.As it features a collector emitter saturation voltage of 400mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 50MHz in the part.When collector current reaches its maximum, it can reach 4A volts.
BD787G Features
the DC current gain for this device is 40 @ 200mA 3V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 2.5V @ 800mA, 4A
the emitter base voltage is kept at 6V
the current rating of this device is 4A
a transition frequency of 50MHz
BD787G Applications
There are a lot of ON Semiconductor
BD787G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BD787G More Descriptions
BD Series 60 V 4 A PNP Complementary Plastic Silicon Power Transistor TO-220 AB
4.0 A, 60 V NPN Bipolar Power Transistor
Trans GP BJT NPN 60V 4A 15000mW 3-Pin(3 Tab) TO-225 Box
Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-225, Plastic/Epoxy, 3 Pin
Transistor, Bipol, Npn, 60V, To-225-3; Transistor Polarity:Npn; Collector Emitter Voltage V(Br)Ceo:60V; Transition Frequency Ft:50Mhz; Power Dissipation Pd:15W; Dc Collector Current:4A; Dc Current Gain Hfe:5Hfe; Transistor Case Rohs Compliant: Yes |Onsemi BD787G
4.0 A, 60 V NPN Bipolar Power Transistor
Trans GP BJT NPN 60V 4A 15000mW 3-Pin(3 Tab) TO-225 Box
Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-225, Plastic/Epoxy, 3 Pin
Transistor, Bipol, Npn, 60V, To-225-3; Transistor Polarity:Npn; Collector Emitter Voltage V(Br)Ceo:60V; Transition Frequency Ft:50Mhz; Power Dissipation Pd:15W; Dc Collector Current:4A; Dc Current Gain Hfe:5Hfe; Transistor Case Rohs Compliant: Yes |Onsemi BD787G
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