Fairchild/ON Semiconductor BD679ASTU

Name: BD679ASTU
Brand: Fairchild/ON Semiconductor
SKU: 2463459-BD679ASTU
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BD679ASTU

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2463459-BD679ASTU

Description:: TRANS NPN DARL 80V 4A TO-126

ECAD Model:

Datasheet:: BD679ASTU

Specifications

Fairchild/ON Semiconductor BD679ASTU technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor BD679ASTU.

Lifecycle Status
LAST SHIPMENTS (Last Updated: 2 days ago)
Factory Lead Time
19 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Number of Pins
3
Weight
761mg
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
Published
2000
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
80V
Max Power Dissipation
40W
Current Rating
4A
Base Part Number
BD679
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Transistor Application
SWITCHING
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
4A
DC Current Gain (hFE) (Min) @ Ic, Vce
750 @ 2A 3V
Current - Collector Cutoff (Max)
500μA
Vce Saturation (Max) @ Ib, Ic
2.8V @ 40mA, 2A
Collector Emitter Breakdown Voltage
80V
Transition Frequency
10MHz
Collector Emitter Saturation Voltage
2.8V
Max Breakdown Voltage
100V
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
5V
hFE Min
750
Continuous Collector Current
4A
Height
11mm
Length
8mm
Width
3.25mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BD679ASTU Overview
This device has a DC current gain of 750 @ 2A 3V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 2.8V.A VCE saturation (Max) of 2.8V @ 40mA, 2A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 4A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 4A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 10MHz.A breakdown input voltage of 100V volts can be used.A maximum collector current of 4A volts is possible.

BD679ASTU Features
the DC current gain for this device is 750 @ 2A 3V
a collector emitter saturation voltage of 2.8V
the vce saturation(Max) is 2.8V @ 40mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 10MHz

BD679ASTU Applications
There are a lot of ON Semiconductor
BD679ASTU applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BD679ASTU More Descriptions

Transistor,bjt,darlington,npn,80V V(Br)Ceo,4A I(C),to-126 Rohs Compliant: Yes
Medium Power NPN Darlington Bipolar Power Transistor
BD679A Series 80 V 4 A Through Hole NPN Epitaxial Silicon Transistor - TO-126
Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
Trans Darlington NPN 80V 4A 40000mW 3-Pin(3 Tab) TO-126 Rail

Product Comparison

The three parts on the right have similar specifications to BD679ASTU.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Voltage - Rated DC

Max Power Dissipation

Current Rating

Base Part Number

Number of Elements

Polarity

Element Configuration

Transistor Application

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Transition Frequency

Collector Emitter Saturation Voltage

Max Breakdown Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

Continuous Collector Current

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Voltage - Collector Emitter Breakdown (Max):

Vce Saturation (Max) @ Ib, Ic:

Transistor Type:

Supplier Device Package:

Series:

Power - Max:

Packaging:

Package / Case:

Operating Temperature:

Mounting Type:

Frequency - Transition:

DC Current Gain (hFE) (Min) @ Ic, Vce:

Current - Collector Cutoff (Max):

Current - Collector (Ic) (Max):

Contact Plating

Pin Count

Power Dissipation

Case Connection

Surface Mount

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Halogen Free

View Compare
BD679ASTU

Fairchild/ON Semiconductor

LAST SHIPMENTS (Last Updated: 2 days ago)

19 Weeks

Through Hole

Through Hole

TO-225AA, TO-126-3

3

761mg

SILICON

150°C TJ

Tube

2000

e3

yes

Obsolete

1 (Unlimited)

3

EAR99

Tin (Sn)

Other Transistors

80V

40W

4A

BD679

1

NPN

Single

SWITCHING

NPN - Darlington

80V

4A

750 @ 2A 3V

500μA

2.8V @ 40mA, 2A

80V

10MHz

2.8V

100V

80V

5V

750

4A

11mm

8mm

3.25mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
BD679

ON Semiconductor

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

80V

2.5V @ 30mA, 1.5A

NPN - Darlington

TO-225AA

-

40W

Bulk

TO-225AA, TO-126-3

-55°C ~ 150°C (TJ)

Through Hole

-

750 @ 1.5A, 3V

500µA

4A

-

-

-

-

-

-

-

-

BD679ASTU vs BD679
BD677A

STMicroelectronics

ACTIVE (Last Updated: 7 months ago)

8 Weeks

Through Hole

Through Hole

TO-225AA, TO-126-3

3

-

SILICON

150°C TJ

Tube

-

e3

-

Active

1 (Unlimited)

3

EAR99

-

Other Transistors

60V

40W

4A

BD677

1

NPN

Single

SWITCHING

NPN - Darlington

60V

4A

750 @ 2A 3V

500μA

2.8V @ 40mA, 2A

60V

10MHz

2.8V

-

60V

5V

750

4A

10.8mm

7.8mm

2.7mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Tin

3

40W

ISOLATED

-

-

-

-

BD679ASTU vs BD677A
BD678G

ON Semiconductor

ACTIVE (Last Updated: 3 days ago)

5 Weeks

-

Through Hole

TO-225AA, TO-126-3

3

-

SILICON

-55°C~150°C TJ

Bulk

1995

e3

yes

Active

1 (Unlimited)

3

EAR99

-

Other Transistors

-60V

40W

-4A

BD678

1

PNP

Single

AMPLIFIER

PNP - Darlington

60V

4A

750 @ 1.5A 3V

500μA

2.5V @ 30mA, 1.5A

60V

200MHz

2.5V

-

60V

5V

750

-

-

-

-

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Tin

3

40W

-

NO

260

40

Halogen Free

BD679ASTU vs BD678G