STMicroelectronics BD679A

Name: BD679A
Brand: STMicroelectronics
SKU: 2845501-BD679A
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BD679A

Manufacturer:: STMicroelectronics

Ventron No:: 2845501-BD679A

Description:: TRANS NPN DARL 80V 4A SOT-32

ECAD Model:

Datasheet:: BD679A

Specifications

STMicroelectronics BD679A technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics BD679A.

Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Factory Lead Time
8 Weeks
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
80V
Max Power Dissipation
40W
Current Rating
4A
Base Part Number
BD679
Pin Count
3
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Power Dissipation
40W
Case Connection
ISOLATED
Transistor Application
SWITCHING
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
4A
DC Current Gain (hFE) (Min) @ Ic, Vce
750 @ 2A 3V
Current - Collector Cutoff (Max)
500μA
Vce Saturation (Max) @ Ib, Ic
2.8V @ 40mA, 2A
Collector Emitter Breakdown Voltage
80V
Transition Frequency
10MHz
Collector Emitter Saturation Voltage
2.8V
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
5V
hFE Min
750
Continuous Collector Current
4A
Height
10.8mm
Length
7.8mm
Width
2.7mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BD679A Overview
In this device, the DC current gain is 750 @ 2A 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 2.8V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 2.8V @ 40mA, 2A.Maintaining the continuous collector voltage at 4A is essential for high efficiency.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (4A).10MHz is present in the transition frequency.Maximum collector currents can be below 4A volts.

BD679A Features
the DC current gain for this device is 750 @ 2A 3V
a collector emitter saturation voltage of 2.8V
the vce saturation(Max) is 2.8V @ 40mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 10MHz

BD679A Applications
There are a lot of STMicroelectronics
BD679A applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BD679A More Descriptions

BD679A Series NPN 80 V 4 A Complementary Power Darlington Transistor - TO-126
Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
TRANSISTOR, BJT, NPN, 80V, 4A, SOT-32-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: -; Power Dissipation Pd: 40W; DC Collector Current: 4A; DC Current Gain hFE: 750hFE; Transist
TRANS, NPN, 80V, 4A, 150DEG C, 40W; Transistor Polarity:NPN; No. of Pins:3Pins; Transistor Mounting:Through Hole; Operating Temperature Max:150°C; Product Range:-; Qualification:-; Collector Emitter Voltage Max:80V RoHS Compliant: Yes

Product Comparison

The three parts on the right have similar specifications to BD679A.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Subcategory

Voltage - Rated DC

Max Power Dissipation

Current Rating

Base Part Number

Pin Count

Number of Elements

Polarity

Element Configuration

Power Dissipation

Case Connection

Transistor Application

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Transition Frequency

Collector Emitter Saturation Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

Continuous Collector Current

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Voltage - Collector Emitter Breakdown (Max):

Vce Saturation (Max) @ Ib, Ic:

Transistor Type:

Supplier Device Package:

Series:

Power - Max:

Packaging:

Package / Case:

Operating Temperature:

Mounting Type:

Frequency - Transition:

DC Current Gain (hFE) (Min) @ Ic, Vce:

Current - Collector Cutoff (Max):

Current - Collector (Ic) (Max):

Surface Mount

Published

Pbfree Code

Terminal Finish

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Halogen Free

View Compare
BD679A

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

8 Weeks

Tin

Through Hole

Through Hole

TO-225AA, TO-126-3

3

SILICON

150°C TJ

Tube

e3

Active

1 (Unlimited)

3

EAR99

Other Transistors

80V

40W

4A

BD679

3

1

NPN

Single

40W

ISOLATED

SWITCHING

NPN - Darlington

80V

4A

750 @ 2A 3V

500μA

2.8V @ 40mA, 2A

80V

10MHz

2.8V

80V

5V

750

4A

10.8mm

7.8mm

2.7mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
BD679

ON Semiconductor

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

80V

2.5V @ 30mA, 1.5A

NPN - Darlington

TO-225AA

-

40W

Bulk

TO-225AA, TO-126-3

-55°C ~ 150°C (TJ)

Through Hole

-

750 @ 1.5A, 3V

500µA

4A

-

-

-

-

-

-

-

BD679A vs BD679
BD677A

STMicroelectronics

ACTIVE (Last Updated: 7 months ago)

8 Weeks

Tin

Through Hole

Through Hole

TO-225AA, TO-126-3

3

SILICON

150°C TJ

Tube

e3

Active

1 (Unlimited)

3

EAR99

Other Transistors

60V

40W

4A

BD677

3

1

NPN

Single

40W

ISOLATED

SWITCHING

NPN - Darlington

60V

4A

750 @ 2A 3V

500μA

2.8V @ 40mA, 2A

60V

10MHz

2.8V

60V

5V

750

4A

10.8mm

7.8mm

2.7mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

BD679A vs BD677A
BD675G

ON Semiconductor

ACTIVE (Last Updated: 1 week ago)

14 Weeks

-

-

Through Hole

TO-225AA, TO-126-3

3

SILICON

-55°C~150°C TJ

Bulk

e3

Active

1 (Unlimited)

3

EAR99

Other Transistors

45V

40W

4A

BD675

3

1

NPN

Single

40W

-

AMPLIFIER

NPN - Darlington

45V

4A

750 @ 1.5A 3V

500μA

2.5V @ 30mA, 1.5A

45V

1MHz

2.5V

45V

5V

750

-

11.04mm

7.74mm

2.66mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

NO

2005

yes

Tin (Sn)

260

40

Halogen Free

BD679A vs BD675G