ON Semiconductor BD677

Name: BD677
Brand: ON Semiconductor
SKU: 2472390-BD677
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BD677

Manufacturer:: ON Semiconductor

Ventron No:: 2472390-BD677

Description:: TRANS NPN DARL 60V 4A TO225

ECAD Model:

Datasheet:: BD677

Specifications

ON Semiconductor BD677 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BD677.

Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Number of Pins
3
Supplier Device Package
TO-225AA
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
Published
2009
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Voltage - Rated DC
60V
Max Power Dissipation
40W
Current Rating
4A
Base Part Number
BD677
Polarity
NPN
Element Configuration
Single
Power Dissipation
40W
Power - Max
40W
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
2.5V
Max Collector Current
4A
DC Current Gain (hFE) (Min) @ Ic, Vce
750 @ 1.5A 3V
Current - Collector Cutoff (Max)
500μA
Vce Saturation (Max) @ Ib, Ic
2.5V @ 30mA, 1.5A
Collector Emitter Breakdown Voltage
60V
Voltage - Collector Emitter Breakdown (Max)
60V
Current - Collector (Ic) (Max)
4A
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
5V
hFE Min
750
Continuous Collector Current
4A
REACH SVHC
No SVHC
RoHS Status
Non-RoHS Compliant
Lead Free
Lead Free

Description

BD677 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 750 @ 1.5A 3V.When VCE saturation is 2.5V @ 30mA, 1.5A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 4A for high efficiency.Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 4A.Supplier package TO-225AA contains the product.The device has a 60V maximal voltage - Collector Emitter Breakdown.A maximum collector current of 4A volts can be achieved.

BD677 Features
the DC current gain for this device is 750 @ 1.5A 3V
the vce saturation(Max) is 2.5V @ 30mA, 1.5A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
the supplier device package of TO-225AA

BD677 Applications
There are a lot of ON Semiconductor
BD677 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BD677 More Descriptions

Bipolar (Bjt) Single Transistor, Darlington, Npn, 60 V, 40 W, 4 A, 750 Rohs Compliant: Yes |Stmicroelectronics BD677
BD6xxx Series NPN 60 V 4 A Complementary Power Darlington Transistor - SOT-32-3
Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
Trans Darlington NPN 60V 4A 40000mW 3-Pin(3 Tab) SOT-32 Tube
Transistor NPN Darlington BD677 SGS THOMSON Ampere=4 TO126
DARLINGTON Transistor, SOT-32; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:-; Power Dissipation Pd:40W;
TRANSISTOR, DARLINGTON TO-126; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 60V; Transition Frequency ft: -; Power Dissipation Pd: 40W; DC Collector Current: 10A; DC Current Gain hFE: 750hFE; Transistor Case Style: TO-126; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Av Current Ic: 4A; Continuous Collector Current Ic Max: 4A; Current Ic Continuous a Max: 4A; Current Ic hFE: 1.5A; Full Power Rating Temperature: 25°C; Hfe Min: 750; No. of Transistors: 1; Power Dissipation Ptot Max: 40W; Transistor Type: Power Darlington; Voltage Vcbo: 60V

Product Comparison

The three parts on the right have similar specifications to BD677.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Number of Pins

Supplier Device Package

Operating Temperature

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

Max Operating Temperature

Min Operating Temperature

Voltage - Rated DC

Max Power Dissipation

Current Rating

Base Part Number

Polarity

Element Configuration

Power Dissipation

Power - Max

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

Continuous Collector Current

REACH SVHC

RoHS Status

Lead Free

Voltage - Collector Emitter Breakdown (Max):

Vce Saturation (Max) @ Ib, Ic:

Transistor Type:

Supplier Device Package:

Series:

Power - Max:

Packaging:

Package / Case:

Operating Temperature:

Mounting Type:

Frequency - Transition:

DC Current Gain (hFE) (Min) @ Ic, Vce:

Current - Collector Cutoff (Max):

Current - Collector (Ic) (Max):

Lifecycle Status

Factory Lead Time

Surface Mount

Transistor Element Material

JESD-609 Code

Pbfree Code

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

Number of Elements

Transistor Application

Halogen Free

Transition Frequency

Collector Emitter Saturation Voltage

Height

Length

Width

Radiation Hardening

Contact Plating

View Compare
BD677

ON Semiconductor

Through Hole

TO-225AA, TO-126-3

3

TO-225AA

-55°C~150°C TJ

Bulk

2009

Obsolete

1 (Unlimited)

150°C

-55°C

60V

40W

4A

BD677

NPN

Single

40W

40W

NPN - Darlington

2.5V

4A

750 @ 1.5A 3V

500μA

2.5V @ 30mA, 1.5A

60V

60V

4A

60V

5V

750

4A

No SVHC

Non-RoHS Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
BD679

ON Semiconductor

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

80V

2.5V @ 30mA, 1.5A

NPN - Darlington

TO-225AA

-

40W

Bulk

TO-225AA, TO-126-3

-55°C ~ 150°C (TJ)

Through Hole

-

750 @ 1.5A, 3V

500µA

4A

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

BD677 vs BD679
BD675G

ON Semiconductor

Through Hole

TO-225AA, TO-126-3

3

-

-55°C~150°C TJ

Bulk

2005

Active

1 (Unlimited)

-

-

45V

40W

4A

BD675

NPN

Single

40W

-

NPN - Darlington

45V

4A

750 @ 1.5A 3V

500μA

2.5V @ 30mA, 1.5A

45V

-

-

45V

5V

750

-

No SVHC

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

ACTIVE (Last Updated: 1 week ago)

14 Weeks

NO

SILICON

e3

yes

3

EAR99

Tin (Sn)

Other Transistors

260

40

3

1

AMPLIFIER

Halogen Free

1MHz

2.5V

11.04mm

7.74mm

2.66mm

No

-

BD677 vs BD675G
BD678G

ON Semiconductor

Through Hole

TO-225AA, TO-126-3

3

-

-55°C~150°C TJ

Bulk

1995

Active

1 (Unlimited)

-

-

-60V

40W

-4A

BD678

PNP

Single

40W

-

PNP - Darlington

60V

4A

750 @ 1.5A 3V

500μA

2.5V @ 30mA, 1.5A

60V

-

-

60V

5V

750

-

No SVHC

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

ACTIVE (Last Updated: 3 days ago)

5 Weeks

NO

SILICON

e3

yes

3

EAR99

-

Other Transistors

260

40

3

1

AMPLIFIER

Halogen Free

200MHz

2.5V

-

-

-

No

Tin

BD677 vs BD678G