ON Semiconductor BD675A
- Part Number:
- BD675A
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2846745-BD675A
- Description:
- TRANS NPN DARL 45V 4A TO225
- Datasheet:
- BD675A
ON Semiconductor BD675A technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BD675A.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-225AA, TO-126-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingBulk
- Published2008
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC45V
- Max Power Dissipation40W
- Peak Reflow Temperature (Cel)260
- Current Rating4A
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberBD675
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- PolarityNPN
- Element ConfigurationSingle
- Power Dissipation40W
- Transistor ApplicationAMPLIFIER
- Transistor TypeNPN - Darlington
- Collector Emitter Voltage (VCEO)45V
- Max Collector Current4A
- DC Current Gain (hFE) (Min) @ Ic, Vce750 @ 2A 3V
- Current - Collector Cutoff (Max)500μA
- Vce Saturation (Max) @ Ib, Ic2.8V @ 40mA, 2A
- Collector Emitter Breakdown Voltage45V
- Collector Emitter Saturation Voltage2.8V
- Collector Base Voltage (VCBO)45V
- Emitter Base Voltage (VEBO)5V
- hFE Min750
- Continuous Collector Current4A
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
BD675A Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 750 @ 2A 3V.The collector emitter saturation voltage is 2.8V, which allows for maximum design flexibility.When VCE saturation is 2.8V @ 40mA, 2A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 4A for high efficiency.Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 4A.A maximum collector current of 4A volts can be achieved.
BD675A Features
the DC current gain for this device is 750 @ 2A 3V
a collector emitter saturation voltage of 2.8V
the vce saturation(Max) is 2.8V @ 40mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
BD675A Applications
There are a lot of ON Semiconductor
BD675A applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 750 @ 2A 3V.The collector emitter saturation voltage is 2.8V, which allows for maximum design flexibility.When VCE saturation is 2.8V @ 40mA, 2A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 4A for high efficiency.Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 4A.A maximum collector current of 4A volts can be achieved.
BD675A Features
the DC current gain for this device is 750 @ 2A 3V
a collector emitter saturation voltage of 2.8V
the vce saturation(Max) is 2.8V @ 40mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
BD675A Applications
There are a lot of ON Semiconductor
BD675A applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BD675A More Descriptions
Bipolar junction transistor, NPN, 4 A, 45 V, THT, TO-225AA, BD675A
Power Bipolar Transistor, 4A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-225AA, Plastic/Epoxy, 3 Pin
French Electronic Distributor since 1988
DIODE SCHOTTKY 30V 200MA SOD523
Power Bipolar Transistor, 4A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-225AA, Plastic/Epoxy, 3 Pin
French Electronic Distributor since 1988
DIODE SCHOTTKY 30V 200MA SOD523
The three parts on the right have similar specifications to BD675A.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountQualification StatusNumber of ElementsPolarityElement ConfigurationPower DissipationTransistor ApplicationTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinContinuous Collector CurrentRoHS StatusLead FreeVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):Lifecycle StatusFactory Lead TimeContact PlatingCase ConnectionTransition FrequencyHeightLengthWidthREACH SVHCRadiation HardeningSurface MountHalogen FreeView Compare
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BD675AThrough HoleThrough HoleTO-225AA, TO-126-33SILICON-55°C~150°C TJBulk2008e3yesObsolete1 (Unlimited)3EAR99Tin (Sn)Other Transistors45V40W2604A40BD6753Not Qualified1NPNSingle40WAMPLIFIERNPN - Darlington45V4A750 @ 2A 3V500μA2.8V @ 40mA, 2A45V2.8V45V5V7504ANon-RoHS CompliantContains Lead---------------------------
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-------------------------------------------80V2.5V @ 30mA, 1.5ANPN - DarlingtonTO-225AA-40WBulkTO-225AA, TO-126-3-55°C ~ 150°C (TJ)Through Hole-750 @ 1.5A, 3V500µA4A------------
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Through HoleThrough HoleTO-225AA, TO-126-33SILICON150°C TJTube-e3-Active1 (Unlimited)3EAR99-Other Transistors60V40W-4A-BD6773-1NPNSingle40WSWITCHINGNPN - Darlington60V4A750 @ 2A 3V500μA2.8V @ 40mA, 2A60V2.8V60V5V7504AROHS3 CompliantLead Free--------------ACTIVE (Last Updated: 7 months ago)8 WeeksTinISOLATED10MHz10.8mm7.8mm2.7mmNo SVHCNo--
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-Through HoleTO-225AA, TO-126-33SILICON-55°C~150°C TJBulk2005e3yesActive1 (Unlimited)3EAR99Tin (Sn)Other Transistors45V40W2604A40BD6753-1NPNSingle40WAMPLIFIERNPN - Darlington45V4A750 @ 1.5A 3V500μA2.5V @ 30mA, 1.5A45V2.5V45V5V750-ROHS3 CompliantLead Free--------------ACTIVE (Last Updated: 1 week ago)14 Weeks--1MHz11.04mm7.74mm2.66mmNo SVHCNoNOHalogen Free
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