BD675A

ON Semiconductor BD675A

Part Number:
BD675A
Manufacturer:
ON Semiconductor
Ventron No:
2846745-BD675A
Description:
TRANS NPN DARL 45V 4A TO225
ECAD Model:
Datasheet:
BD675A

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Specifications
ON Semiconductor BD675A technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BD675A.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-225AA, TO-126-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Bulk
  • Published
    2008
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    45V
  • Max Power Dissipation
    40W
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    4A
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    BD675
  • Pin Count
    3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Polarity
    NPN
  • Element Configuration
    Single
  • Power Dissipation
    40W
  • Transistor Application
    AMPLIFIER
  • Transistor Type
    NPN - Darlington
  • Collector Emitter Voltage (VCEO)
    45V
  • Max Collector Current
    4A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    750 @ 2A 3V
  • Current - Collector Cutoff (Max)
    500μA
  • Vce Saturation (Max) @ Ib, Ic
    2.8V @ 40mA, 2A
  • Collector Emitter Breakdown Voltage
    45V
  • Collector Emitter Saturation Voltage
    2.8V
  • Collector Base Voltage (VCBO)
    45V
  • Emitter Base Voltage (VEBO)
    5V
  • hFE Min
    750
  • Continuous Collector Current
    4A
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Contains Lead
Description
BD675A Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 750 @ 2A 3V.The collector emitter saturation voltage is 2.8V, which allows for maximum design flexibility.When VCE saturation is 2.8V @ 40mA, 2A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 4A for high efficiency.Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 4A.A maximum collector current of 4A volts can be achieved.

BD675A Features
the DC current gain for this device is 750 @ 2A 3V
a collector emitter saturation voltage of 2.8V
the vce saturation(Max) is 2.8V @ 40mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 4A


BD675A Applications
There are a lot of ON Semiconductor
BD675A applications of single BJT transistors.


Inverter
Interface
Driver
Muting
BD675A More Descriptions
Bipolar junction transistor, NPN, 4 A, 45 V, THT, TO-225AA, BD675A
Power Bipolar Transistor, 4A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-225AA, Plastic/Epoxy, 3 Pin
French Electronic Distributor since 1988
DIODE SCHOTTKY 30V 200MA SOD523
Product Comparison
The three parts on the right have similar specifications to BD675A.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    Qualification Status
    Number of Elements
    Polarity
    Element Configuration
    Power Dissipation
    Transistor Application
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Collector Emitter Saturation Voltage
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    hFE Min
    Continuous Collector Current
    RoHS Status
    Lead Free
    Voltage - Collector Emitter Breakdown (Max):
    Vce Saturation (Max) @ Ib, Ic:
    Transistor Type:
    Supplier Device Package:
    Series:
    Power - Max:
    Packaging:
    Package / Case:
    Operating Temperature:
    Mounting Type:
    Frequency - Transition:
    DC Current Gain (hFE) (Min) @ Ic, Vce:
    Current - Collector Cutoff (Max):
    Current - Collector (Ic) (Max):
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Case Connection
    Transition Frequency
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    Surface Mount
    Halogen Free
    View Compare
  • BD675A
    BD675A
    Through Hole
    Through Hole
    TO-225AA, TO-126-3
    3
    SILICON
    -55°C~150°C TJ
    Bulk
    2008
    e3
    yes
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    Other Transistors
    45V
    40W
    260
    4A
    40
    BD675
    3
    Not Qualified
    1
    NPN
    Single
    40W
    AMPLIFIER
    NPN - Darlington
    45V
    4A
    750 @ 2A 3V
    500μA
    2.8V @ 40mA, 2A
    45V
    2.8V
    45V
    5V
    750
    4A
    Non-RoHS Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • BD679
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    80V
    2.5V @ 30mA, 1.5A
    NPN - Darlington
    TO-225AA
    -
    40W
    Bulk
    TO-225AA, TO-126-3
    -55°C ~ 150°C (TJ)
    Through Hole
    -
    750 @ 1.5A, 3V
    500µA
    4A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • BD677A
    Through Hole
    Through Hole
    TO-225AA, TO-126-3
    3
    SILICON
    150°C TJ
    Tube
    -
    e3
    -
    Active
    1 (Unlimited)
    3
    EAR99
    -
    Other Transistors
    60V
    40W
    -
    4A
    -
    BD677
    3
    -
    1
    NPN
    Single
    40W
    SWITCHING
    NPN - Darlington
    60V
    4A
    750 @ 2A 3V
    500μA
    2.8V @ 40mA, 2A
    60V
    2.8V
    60V
    5V
    750
    4A
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ACTIVE (Last Updated: 7 months ago)
    8 Weeks
    Tin
    ISOLATED
    10MHz
    10.8mm
    7.8mm
    2.7mm
    No SVHC
    No
    -
    -
  • BD675G
    -
    Through Hole
    TO-225AA, TO-126-3
    3
    SILICON
    -55°C~150°C TJ
    Bulk
    2005
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    Other Transistors
    45V
    40W
    260
    4A
    40
    BD675
    3
    -
    1
    NPN
    Single
    40W
    AMPLIFIER
    NPN - Darlington
    45V
    4A
    750 @ 1.5A 3V
    500μA
    2.5V @ 30mA, 1.5A
    45V
    2.5V
    45V
    5V
    750
    -
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ACTIVE (Last Updated: 1 week ago)
    14 Weeks
    -
    -
    1MHz
    11.04mm
    7.74mm
    2.66mm
    No SVHC
    No
    NO
    Halogen Free
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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