ON Semiconductor BD442

Name: BD442
Brand: ON Semiconductor
SKU: 2468166-BD442
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BD442

Manufacturer:: ON Semiconductor

Ventron No:: 2468166-BD442

Description:: TRANS PNP 80V 4A TO-225AA

ECAD Model:

Datasheet:: BD442

Specifications

ON Semiconductor BD442 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BD442.

Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Bulk
JESD-609 Code
e0
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
TIN LEAD
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
240
Reach Compliance Code
unknown
Time@Peak Reflow Temperature-Max (s)
30
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Power - Max
36W
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 500mA 1V
Current - Collector Cutoff (Max)
100μA
Vce Saturation (Max) @ Ib, Ic
800mV @ 200mA, 2A
Voltage - Collector Emitter Breakdown (Max)
80V
Current - Collector (Ic) (Max)
4A
Transition Frequency
3MHz
RoHS Status
Non-RoHS Compliant

Description

BD442 Overview
In this device, the DC current gain is 40 @ 500mA 1V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 800mV @ 200mA, 2A.Single BJT transistor contains a transSingle BJT transistorion frequency of 3MHz.There is a 80V maximal voltage in the device due to collector-emitter breakdown.

BD442 Features
the DC current gain for this device is 40 @ 500mA 1V
the vce saturation(Max) is 800mV @ 200mA, 2A
a transition frequency of 3MHz

BD442 Applications
There are a lot of Rochester Electronics, LLC
BD442 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

Product Comparison

The three parts on the right have similar specifications to BD442.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Terminal Position

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power - Max

Transistor Application

Polarity/Channel Type

Transistor Type

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

Transition Frequency

RoHS Status

Lifecycle Status

Factory Lead Time

Number of Pins

Published

ECCN Code

Subcategory

Voltage - Rated DC

Max Power Dissipation

Current Rating

Frequency

Base Part Number

Element Configuration

Power Dissipation

Gain Bandwidth Product

Collector Emitter Voltage (VCEO)

Max Collector Current

Collector Emitter Breakdown Voltage

Collector Emitter Saturation Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

REACH SVHC

Radiation Hardening

Lead Free

Voltage - Collector Emitter Breakdown (Max):

Vce Saturation (Max) @ Ib, Ic:

Transistor Type:

Supplier Device Package:

Series:

Power - Max:

Packaging:

Package / Case:

Operating Temperature:

Mounting Type:

Frequency - Transition:

DC Current Gain (hFE) (Min) @ Ic, Vce:

Current - Collector Cutoff (Max):

Current - Collector (Ic) (Max):

View Compare
BD442

ON Semiconductor

Through Hole

TO-225AA, TO-126-3

NO

SILICON

150°C TJ

Bulk

e0

no

Obsolete

1 (Unlimited)

3

TIN LEAD

SINGLE

240

unknown

30

3

R-PSFM-T3

COMMERCIAL

1

SINGLE

36W

SWITCHING

PNP

PNP

40 @ 500mA 1V

100μA

800mV @ 200mA, 2A

80V

4A

3MHz

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
BD441G

ON Semiconductor

Through Hole

TO-225AA, TO-126-3

NO

SILICON

-55°C~150°C TJ

Bulk

e3

yes

Active

1 (Unlimited)

3

Tin (Sn)

-

260

-

40

3

-

-

1

-

-

SWITCHING

NPN

NPN

40 @ 500mA 1V

100μA ICBO

800mV @ 300mA, 3A

-

-

3MHz

ROHS3 Compliant

ACTIVE (Last Updated: 3 days ago)

2 Weeks

3

2000

EAR99

Other Transistors

80V

36W

4A

3MHz

BD441

Single

36W

3MHz

80V

4A

80V

800mV

80V

5V

15

No SVHC

No

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

BD442 vs BD441G
BD442

STMicroelectronics

-

-

-

-

-

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-

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-

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-

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-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

80V

800mV @ 200mA, 2A

PNP

SOT-32

-

36W

Tube

TO-225AA, TO-126-3

150°C (TJ)

Through Hole

-

40 @ 500mA, 1V

100µA

4A

-
BD441

STMicroelectronics

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

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-

-

-

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-

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-

-

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-

-

-

-

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-

-

-

-

-

-

-

-

-

-

-

80V

800mV @ 200mA, 2A

NPN

SOT-32

-

36W

Tube

TO-225AA, TO-126-3

150°C (TJ)

Through Hole

-

40 @ 500mA, 1V

100µA

4A

BD442 vs BD441