BD437S

Fairchild/ON Semiconductor BD437S

Part Number:
BD437S
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
3585134-BD437S
Description:
TRANS NPN 45V 4A TO-126
ECAD Model:
Datasheet:
BD437S

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Specifications
Fairchild/ON Semiconductor BD437S technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor BD437S.
  • Lifecycle Status
    LIFETIME (Last Updated: 2 days ago)
  • Factory Lead Time
    12 Weeks
  • Contact Plating
    Tin
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-225AA, TO-126-3
  • Number of Pins
    3
  • Weight
    761mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Bulk
  • Published
    2011
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    45V
  • Max Power Dissipation
    36W
  • Current Rating
    4A
  • Frequency
    3MHz
  • Base Part Number
    BD437
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    36W
  • Transistor Application
    SWITCHING
  • Gain Bandwidth Product
    3MHz
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    45V
  • Max Collector Current
    4A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    30 @ 10mA 5V
  • Current - Collector Cutoff (Max)
    100μA
  • Vce Saturation (Max) @ Ib, Ic
    600mV @ 200mA, 2A
  • Collector Emitter Breakdown Voltage
    60V
  • Transition Frequency
    3MHz
  • Collector Emitter Saturation Voltage
    200mV
  • Max Breakdown Voltage
    45V
  • Collector Base Voltage (VCBO)
    45V
  • Emitter Base Voltage (VEBO)
    5V
  • hFE Min
    40
  • Height
    11mm
  • Length
    8mm
  • Width
    3.25mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
BD437S Overview
This device has a DC current gain of 30 @ 10mA 5V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 200mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 4A.In this part, there is a transition frequency of 3MHz.As a result, it can handle voltages as low as 45V volts.The maximum collector current is 4A volts.

BD437S Features
the DC current gain for this device is 30 @ 10mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 600mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 3MHz


BD437S Applications
There are a lot of ON Semiconductor
BD437S applications of single BJT transistors.


Inverter
Interface
Driver
Muting
BD437S More Descriptions
Transistor General Purpose BJT NPN 45 Volt 4 Amp 3-Pin TO-126 Bulk
Medium Power NPN Bipolar Power Transistor
Power Bipolar Transistor, 4A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
Trans GP BJT NPN 45V 4A 3-Pin(3 Tab) TO-126 Bulk - Bulk
Bipolar Transistors - BJT NPN Epitaxial Sil
Transistor Polarity:npn; Collector Emitter Voltage V(Br)Ceo:45V; Dc Collector Current:4A; Power Dissipation Pd:36W; Transistor Mounting:surface Mount; No. Of Pins:3Pins; Transition Frequency Ft:3Mhz; Dc Current Gain Hfe:140Hfe Rohs Compliant: Yes
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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