STMicroelectronics BD437

Name: BD437
Brand: STMicroelectronics
SKU: 2472406-BD437
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BD437

Manufacturer:: STMicroelectronics

Ventron No:: 2472406-BD437

Description:: TRANS NPN 45V 4A SOT-32

ECAD Model:

Datasheet:: BD437

Specifications

STMicroelectronics BD437 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics BD437.

Voltage - Collector Emitter Breakdown (Max):
45V
Vce Saturation (Max) @ Ib, Ic:
600mV @ 200mA, 2A
Transistor Type:
NPN
Supplier Device Package:
SOT-32-3
Series:
-
Power - Max:
36W
Packaging:
Tube
Package / Case:
TO-225AA, TO-126-3
Operating Temperature:
150°C (TJ)
Mounting Type:
Through Hole
Frequency - Transition:
3MHz
DC Current Gain (hFE) (Min) @ Ic, Vce:
30 @ 10mA, 5V
Current - Collector Cutoff (Max):
100µA
Current - Collector (Ic) (Max):
4A

Description

part No. BD437 Is this available? : YesShipped from : HK warehouseSame model may have different manufacturers, images only for reference.

BD437 More Descriptions

Power Bipolar Transistor, 4A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
NPN TRANSISTOR 45V 4A 36W TO126 RoHSconf
Trans GP BJT NPN 45V 4A 3-Pin(3 Tab) SOT-32 Tube - Rail/Tube
BD437 Series 45 V 2 A Flange Mount Complementary Silicon Power Transistor-SOT-32
; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:45V; Continuous Collector Current, Ic:4A; Collector Emitter Saturation Voltage, Vce(sat):0.6V; Power Dissipation, Pd:36W; DC Current Gain Min (hfe):40 ;RoHS Compliant: Yes
TRANSISTOR, NPN, TO-126; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency Typ ft:3MHz; Power Dissipation Pd:36W; DC Collector Current:4A; DC Current Gain hFE:140; Transistor Case Style:TO-126; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:600mV; Continuous Collector Current Ic Max:4A; Current Ic Continuous a Max:4A; Current Ic hFE:2A; Device Marking:BD437; Full Power Rating Temperature:25°C; Gain Bandwidth ft Min:3MHz; Gain Bandwidth ft Typ:3MHz; Hfe Min:40; No. of Transistors:1; Package / Case:TO-126; Power Dissipation Pd:36W; Power Dissipation Ptot Max:36W; Termination Type:Through Hole; Voltage Vcbo:45V

Product Comparison

The three parts on the right have similar specifications to BD437.

Image

Part Number

Manufacturer

Voltage - Collector Emitter Breakdown (Max):

Vce Saturation (Max) @ Ib, Ic:

Transistor Type:

Supplier Device Package:

Series:

Power - Max:

Packaging:

Package / Case:

Operating Temperature:

Mounting Type:

Frequency - Transition:

DC Current Gain (hFE) (Min) @ Ic, Vce:

Current - Collector Cutoff (Max):

Current - Collector (Ic) (Max):

Lifecycle Status

Factory Lead Time

Mounting Type

Package / Case

Surface Mount

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Voltage - Rated DC

Max Power Dissipation

Peak Reflow Temperature (Cel)

Current Rating

Frequency

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Number of Elements

Element Configuration

Power Dissipation

Transistor Application

Gain Bandwidth Product

Polarity/Channel Type

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Transition Frequency

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

Radiation Hardening

RoHS Status

Lead Free

Contact Plating

Mount

Weight

Collector Emitter Saturation Voltage

Max Breakdown Voltage

Height

Length

Width

REACH SVHC

Terminal Position

Reach Compliance Code

Qualification Status

Configuration

Current - Collector (Ic) (Max)

View Compare
BD437

STMicroelectronics

45V

600mV @ 200mA, 2A

NPN

SOT-32-3

-

36W

Tube

TO-225AA, TO-126-3

150°C (TJ)

Through Hole

3MHz

30 @ 10mA, 5V

100µA

4A

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
BD435G

ON Semiconductor

-

-

-

-

-

-

-

-

-

-

-

-

-

-

ACTIVE (Last Updated: 3 days ago)

2 Weeks

Through Hole

TO-225AA, TO-126-3

NO

3

SILICON

-55°C~150°C TJ

Bulk

2003

e3

yes

Active

1 (Unlimited)

3

EAR99

Tin (Sn)

Other Transistors

32V

36W

260

4A

3MHz

40

BD435

3

1

Single

36W

SWITCHING

3MHz

NPN

NPN

32V

4A

85 @ 500mA 1V

100μA ICBO

500mV @ 200mA, 2A

32V

3MHz

32V

5V

40

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

BD437 vs BD435G
BD437S

Fairchild/ON Semiconductor

-

-

-

-

-

-

-

-

-

-

-

-

-

-

LIFETIME (Last Updated: 2 days ago)

12 Weeks

Through Hole

TO-225AA, TO-126-3

-

3

SILICON

150°C TJ

Bulk

2011

e3

yes

Obsolete

1 (Unlimited)

3

EAR99

-

Other Transistors

45V

36W

-

4A

3MHz

-

BD437

-

1

Single

36W

SWITCHING

3MHz

NPN

NPN

45V

4A

30 @ 10mA 5V

100μA

600mV @ 200mA, 2A

60V

3MHz

45V

5V

40

No

ROHS3 Compliant

Lead Free

Tin

Through Hole

761mg

200mV

45V

11mm

8mm

3.25mm

No SVHC

-

-

-

-

-

BD437 vs BD437S
BD436T

ON Semiconductor

-

-

-

-

-

-

-

-

-

-

-

-

-

-

LAST SHIPMENTS (Last Updated: 1 week ago)

-

Through Hole

TO-225AA, TO-126-3

NO

3

SILICON

-55°C~150°C TJ

Tube

2005

e0

no

Obsolete

1 (Unlimited)

3

EAR99

Tin/Lead (Sn/Pb)

Other Transistors

-32V

36W

240

-4A

-

30

BD436

3

1

-

-

SWITCHING

3MHz

PNP

PNP

500mV

4A

85 @ 500mA 1V

100μA ICBO

500mV @ 200mA, 2A

32V

3MHz

32V

5V

40

-

Non-RoHS Compliant

Contains Lead

-

-

-

500mV

-

-

-

-

-

SINGLE

not_compliant

Not Qualified

SINGLE

4A

BD437 vs BD436T