ON Semiconductor BD437

Name: BD437
Brand: ON Semiconductor
SKU: 2468162-BD437
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BD437

Manufacturer:: ON Semiconductor

Ventron No:: 2468162-BD437

Description:: TRANS NPN 45V 4A TO-225AA

ECAD Model:

Datasheet:: BD437

Specifications

ON Semiconductor BD437 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BD437.

Lifecycle Status
NRND (Last Updated: 8 months ago)
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Number of Pins
3
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
JESD-609 Code
e3
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Max Power Dissipation
36W
Frequency
3MHz
Base Part Number
BD437
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
36W
Case Connection
ISOLATED
Transistor Application
SWITCHING
Gain Bandwidth Product
3MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
45V
Max Collector Current
4A
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 10mA 5V
Current - Collector Cutoff (Max)
100μA
Vce Saturation (Max) @ Ib, Ic
600mV @ 200mA, 2A
Collector Emitter Breakdown Voltage
45V
Transition Frequency
3MHz
Collector Emitter Saturation Voltage
200mV
Collector Base Voltage (VCBO)
45V
Emitter Base Voltage (VEBO)
5V
hFE Min
30
VCEsat-Max
0.6 V
Height
10.8mm
Length
7.8mm
Width
2.7mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BD437 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 30 @ 10mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 200mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 200mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 3MHz.During maximum operation, collector current can be as low as 4A volts.

BD437 Features
the DC current gain for this device is 30 @ 10mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 600mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 3MHz

BD437 Applications
There are a lot of STMicroelectronics
BD437 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BD437 More Descriptions

Power Bipolar Transistor, 4A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
NPN TRANSISTOR 45V 4A 36W TO126 RoHSconf
Trans GP BJT NPN 45V 4A 3-Pin(3 Tab) SOT-32 Tube - Rail/Tube
BD437 Series 45 V 2 A Flange Mount Complementary Silicon Power Transistor-SOT-32
; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:45V; Continuous Collector Current, Ic:4A; Collector Emitter Saturation Voltage, Vce(sat):0.6V; Power Dissipation, Pd:36W; DC Current Gain Min (hfe):40 ;RoHS Compliant: Yes
TRANSISTOR, NPN, TO-126; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency Typ ft:3MHz; Power Dissipation Pd:36W; DC Collector Current:4A; DC Current Gain hFE:140; Transistor Case Style:TO-126; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:600mV; Continuous Collector Current Ic Max:4A; Current Ic Continuous a Max:4A; Current Ic hFE:2A; Device Marking:BD437; Full Power Rating Temperature:25°C; Gain Bandwidth ft Min:3MHz; Gain Bandwidth ft Typ:3MHz; Hfe Min:40; No. of Transistors:1; Package / Case:TO-126; Power Dissipation Pd:36W; Power Dissipation Ptot Max:36W; Termination Type:Through Hole; Voltage Vcbo:45V

Product Comparison

The three parts on the right have similar specifications to BD437.

Image

Part Number

Manufacturer

Lifecycle Status

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Subcategory

Max Power Dissipation

Frequency

Base Part Number

Pin Count

Number of Elements

Element Configuration

Power Dissipation

Case Connection

Transistor Application

Gain Bandwidth Product

Polarity/Channel Type

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Transition Frequency

Collector Emitter Saturation Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

VCEsat-Max

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Factory Lead Time

Surface Mount

Published

Pbfree Code

Terminal Finish

Voltage - Rated DC

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Max Breakdown Voltage

Terminal Position

Reach Compliance Code

Qualification Status

Configuration

Current - Collector (Ic) (Max)

View Compare
BD437

ON Semiconductor

NRND (Last Updated: 8 months ago)

Tin

Through Hole

Through Hole

TO-225AA, TO-126-3

3

4.535924g

SILICON

150°C TJ

Tube

e3

Not For New Designs

1 (Unlimited)

3

EAR99

Other Transistors

36W

3MHz

BD437

3

1

Single

36W

ISOLATED

SWITCHING

3MHz

NPN

NPN

45V

4A

30 @ 10mA 5V

100μA

600mV @ 200mA, 2A

45V

3MHz

200mV

45V

5V

30

0.6 V

10.8mm

7.8mm

2.7mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
BD435G

ON Semiconductor

ACTIVE (Last Updated: 3 days ago)

-

-

Through Hole

TO-225AA, TO-126-3

3

-

SILICON

-55°C~150°C TJ

Bulk

e3

Active

1 (Unlimited)

3

EAR99

Other Transistors

36W

3MHz

BD435

3

1

Single

36W

-

SWITCHING

3MHz

NPN

NPN

32V

4A

85 @ 500mA 1V

100μA ICBO

500mV @ 200mA, 2A

32V

3MHz

-

32V

5V

40

-

-

-

-

-

No

ROHS3 Compliant

Lead Free

2 Weeks

NO

2003

yes

Tin (Sn)

32V

260

4A

40

-

-

-

-

-

-

BD437 vs BD435G
BD437S

Fairchild/ON Semiconductor

LIFETIME (Last Updated: 2 days ago)

Tin

Through Hole

Through Hole

TO-225AA, TO-126-3

3

761mg

SILICON

150°C TJ

Bulk

e3

Obsolete

1 (Unlimited)

3

EAR99

Other Transistors

36W

3MHz

BD437

-

1

Single

36W

-

SWITCHING

3MHz

NPN

NPN

45V

4A

30 @ 10mA 5V

100μA

600mV @ 200mA, 2A

60V

3MHz

200mV

45V

5V

40

-

11mm

8mm

3.25mm

No SVHC

No

ROHS3 Compliant

Lead Free

12 Weeks

-

2011

yes

-

45V

-

4A

-

45V

-

-

-

-

-

BD437 vs BD437S
BD436T

ON Semiconductor

LAST SHIPMENTS (Last Updated: 1 week ago)

-

-

Through Hole

TO-225AA, TO-126-3

3

-

SILICON

-55°C~150°C TJ

Tube

e0

Obsolete

1 (Unlimited)

3

EAR99

Other Transistors

36W

-

BD436

3

1

-

-

-

SWITCHING

3MHz

PNP

PNP

500mV

4A

85 @ 500mA 1V

100μA ICBO

500mV @ 200mA, 2A

32V

3MHz

500mV

32V

5V

40

-

-

-

-

-

-

Non-RoHS Compliant

Contains Lead

-

NO

2005

no

Tin/Lead (Sn/Pb)

-32V

240

-4A

30

-

SINGLE

not_compliant

Not Qualified

SINGLE

4A

BD437 vs BD436T