STMicroelectronics BD436

Name: BD436
Brand: STMicroelectronics
SKU: 2472409-BD436
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BD436

Manufacturer:: STMicroelectronics

Ventron No:: 2472409-BD436

Description:: TRANS PNP 32V 4A SOT-32

ECAD Model:

Datasheet:: BD436

Specifications

STMicroelectronics BD436 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics BD436.

Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
36W
Frequency
3MHz
Base Part Number
BD436
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
36W
Case Connection
ISOLATED
Transistor Application
SWITCHING
Gain Bandwidth Product
3MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
32V
Max Collector Current
4A
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 10mA 5V
Current - Collector Cutoff (Max)
100μA
Vce Saturation (Max) @ Ib, Ic
500mV @ 200mA, 2A
Collector Emitter Breakdown Voltage
32V
Transition Frequency
3MHz
Collector Emitter Saturation Voltage
200mV
Collector Base Voltage (VCBO)
32V
Emitter Base Voltage (VEBO)
5V
hFE Min
40
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant

Description

BD436 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 10mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 200mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 200mA, 2A.The emitter base voltage can be kept at 5V for high efficiency.The part has a transition frequency of 3MHz.Single BJT transistor is possible to have a collector current as low as 4A volts at Single BJT transistors maximum.

BD436 Features
the DC current gain for this device is 40 @ 10mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 3MHz

BD436 Applications
There are a lot of STMicroelectronics
BD436 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BD436 More Descriptions

Trans GP BJT PNP 32V 4A 36000mW 3-Pin(3 Tab) SOT-32 Tube
Power Bipolar Transistor, 4A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin
TRANSISTOR, PNP, TO-126; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 32V; Transition Frequency ft: 3MHz; Power Dissipation Pd: 36W; DC Collector Current: 4A; DC Current Gain hFE: 140hFE; Transistor Case Style: TO-126; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Collector Emitter Saturation Voltage Vce(on): -500mV; Continuous Collector Current Ic Max: 4A; Current Ic Continuous a Max: 4A; Current Ic hFE: 2A; Device Marking: BD436; Full Power Rating Temperature: 25°C; Gain Bandwidth ft Min: 3MHz; Gain Bandwidth ft Typ: 3MHz; Hfe Min: 50; No. of Transistors: 1; Power Dissipation Ptot Max: 36W; Voltage Vcbo: 32V

Product Comparison

The three parts on the right have similar specifications to BD436.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Max Power Dissipation

Frequency

Base Part Number

Pin Count

Number of Elements

Element Configuration

Power Dissipation

Case Connection

Transistor Application

Gain Bandwidth Product

Polarity/Channel Type

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Transition Frequency

Collector Emitter Saturation Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

REACH SVHC

Radiation Hardening

RoHS Status

Lifecycle Status

Factory Lead Time

Surface Mount

Published

Voltage - Rated DC

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Lead Free

Contact Plating

Weight

Max Breakdown Voltage

Height

Length

Width

Terminal Position

Reach Compliance Code

Qualification Status

Configuration

Current - Collector (Ic) (Max)

View Compare
BD436

STMicroelectronics

Through Hole

Through Hole

TO-225AA, TO-126-3

3

SILICON

150°C TJ

Tube

e3

yes

Obsolete

1 (Unlimited)

3

EAR99

Matte Tin (Sn)

Other Transistors

36W

3MHz

BD436

3

1

Single

36W

ISOLATED

SWITCHING

3MHz

PNP

PNP

32V

4A

40 @ 10mA 5V

100μA

500mV @ 200mA, 2A

32V

3MHz

200mV

32V

5V

40

No SVHC

No

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
BD435G

ON Semiconductor

-

Through Hole

TO-225AA, TO-126-3

3

SILICON

-55°C~150°C TJ

Bulk

e3

yes

Active

1 (Unlimited)

3

EAR99

Tin (Sn)

Other Transistors

36W

3MHz

BD435

3

1

Single

36W

-

SWITCHING

3MHz

NPN

NPN

32V

4A

85 @ 500mA 1V

100μA ICBO

500mV @ 200mA, 2A

32V

3MHz

-

32V

5V

40

-

No

ROHS3 Compliant

ACTIVE (Last Updated: 3 days ago)

2 Weeks

NO

2003

32V

260

4A

40

Lead Free

-

-

-

-

-

-

-

-

-

-

-

BD436 vs BD435G
BD437S

Fairchild/ON Semiconductor

Through Hole

Through Hole

TO-225AA, TO-126-3

3

SILICON

150°C TJ

Bulk

e3

yes

Obsolete

1 (Unlimited)

3

EAR99

-

Other Transistors

36W

3MHz

BD437

-

1

Single

36W

-

SWITCHING

3MHz

NPN

NPN

45V

4A

30 @ 10mA 5V

100μA

600mV @ 200mA, 2A

60V

3MHz

200mV

45V

5V

40

No SVHC

No

ROHS3 Compliant

LIFETIME (Last Updated: 2 days ago)

12 Weeks

-

2011

45V

-

4A

-

Lead Free

Tin

761mg

45V

11mm

8mm

3.25mm

-

-

-

-

-

BD436 vs BD437S
BD436T

ON Semiconductor

-

Through Hole

TO-225AA, TO-126-3

3

SILICON

-55°C~150°C TJ

Tube

e0

no

Obsolete

1 (Unlimited)

3

EAR99

Tin/Lead (Sn/Pb)

Other Transistors

36W

-

BD436

3

1

-

-

-

SWITCHING

3MHz

PNP

PNP

500mV

4A

85 @ 500mA 1V

100μA ICBO

500mV @ 200mA, 2A

32V

3MHz

500mV

32V

5V

40

-

-

Non-RoHS Compliant

LAST SHIPMENTS (Last Updated: 1 week ago)

-

NO

2005

-32V

240

-4A

30

Contains Lead

-

-

-

-

-

-

SINGLE

not_compliant

Not Qualified

SINGLE

4A

BD436 vs BD436T