STMicroelectronics BD241C
- Part Number:
- BD241C
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2463452-BD241C
- Description:
- TRANS NPN 100V 3A TO-220
- Datasheet:
- BD241-42A/B/C
STMicroelectronics BD241C technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics BD241C.
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTube
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishMATTE TIN
- Additional FeatureLEADFORM OPTIONS ARE AVAILABLE
- Terminal PositionSINGLE
- Peak Reflow Temperature (Cel)260
- Reach Compliance Codeunknown
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- JESD-30 CodeR-PSFM-T3
- Qualification StatusCOMMERCIAL
- Number of Elements1
- ConfigurationSINGLE
- Case ConnectionCOLLECTOR
- Power - Max40W
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- DC Current Gain (hFE) (Min) @ Ic, Vce10 @ 3A 4V
- Current - Collector Cutoff (Max)300μA
- JEDEC-95 CodeTO-220AB
- Vce Saturation (Max) @ Ib, Ic1.2V @ 600mA, 3A
- Voltage - Collector Emitter Breakdown (Max)100V
- Current - Collector (Ic) (Max)3A
- Transition Frequency3MHz
- RoHS StatusNon-RoHS Compliant
BD241C Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 10 @ 3A 4V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is a transition frequency of 3MHz in the part.Single BJT transistor shows a 100V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
BD241C Features
the DC current gain for this device is 10 @ 3A 4V
the vce saturation(Max) is 1.2V @ 600mA, 3A
a transition frequency of 3MHz
BD241C Applications
There are a lot of Rochester Electronics, LLC
BD241C applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 10 @ 3A 4V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is a transition frequency of 3MHz in the part.Single BJT transistor shows a 100V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
BD241C Features
the DC current gain for this device is 10 @ 3A 4V
the vce saturation(Max) is 1.2V @ 600mA, 3A
a transition frequency of 3MHz
BD241C Applications
There are a lot of Rochester Electronics, LLC
BD241C applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BD241C More Descriptions
Bipolar junction transistor, NPN, 3 A, 100 ## Fehler ##, THT, TO-220, BD241C
Trans GP BJT NPN 100V 3A 3-Pin(3 Tab) TO-220 Tube - Rail/Tube
Bipolar (Bjt) Single Transistor, Npn, 100 V, 40 W, 5 A, 25 Rohs Compliant: Yes |Stmicroelectronics BD241C
BD241C Series NPN 100 V 3 A Flange Mount Silicon Power Transistor - TO-220
Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Bipolar Transistors - BJT NPN Pwr Transistors
Power Bipolar, NPN, 4V, 600mA, TO-220, TubeSTMicroelectronics SCT
TRANSISTOR, NPN, TO-220; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: -; Power Dissipation Pd: 40W; DC Collector Current: 5A; DC Current Gain hFE: 25hFE; Transistor Case Style: TO
Trans GP BJT NPN 100V 3A 3-Pin(3 Tab) TO-220 Tube - Rail/Tube
Bipolar (Bjt) Single Transistor, Npn, 100 V, 40 W, 5 A, 25 Rohs Compliant: Yes |Stmicroelectronics BD241C
BD241C Series NPN 100 V 3 A Flange Mount Silicon Power Transistor - TO-220
Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Bipolar Transistors - BJT NPN Pwr Transistors
Power Bipolar, NPN, 4V, 600mA, TO-220, TubeSTMicroelectronics SCT
TRANSISTOR, NPN, TO-220; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: -; Power Dissipation Pd: 40W; DC Collector Current: 5A; DC Current Gain hFE: 25hFE; Transistor Case Style: TO
The three parts on the right have similar specifications to BD241C.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishAdditional FeatureTerminal PositionPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationCase ConnectionPower - MaxTransistor ApplicationPolarity/Channel TypeTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)JEDEC-95 CodeVce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Transition FrequencyRoHS StatusVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):MountNumber of PinsPublishedECCN CodeSubcategoryMax Power DissipationBase Part NumberElement ConfigurationPower DissipationCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageEmitter Base Voltage (VEBO)Continuous Collector CurrentRadiation HardeningLead FreeVCEsat-MaxPower Dissipation Ambient-MaxView Compare
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BD241CThrough HoleTO-220-3NOSILICON150°C TJTubee3yesObsolete1 (Unlimited)3MATTE TINLEADFORM OPTIONS ARE AVAILABLESINGLE260unknown403R-PSFM-T3COMMERCIAL1SINGLECOLLECTOR40WSWITCHINGNPNNPN10 @ 3A 4V300μATO-220AB1.2V @ 600mA, 3A100V3A3MHzNon-RoHS Compliant---------------------------------
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-----------------------------------100V1.2V @ 600mA, 3APNPTO-220-40WBulkTO-220-3150°C (TJ)Through Hole-25 @ 1A, 4V300µA3A------------------
-
Through HoleTO-220-3-SILICON-65°C~150°C TJTubee1yesObsolete1 (Unlimited)3TIN SILVER COPPER-----3--1-COLLECTOR2WSWITCHINGPNPPNP25 @ 1A 4V300μATO-220AB1.2V @ 600mA, 3A---ROHS3 Compliant--------------Through Hole31993EAR99Other Transistors40WBD242Single40W45V3A45V5V3ANoLead Free--
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Through HoleTO-220-3NOSILICON150°C TJBulk--Obsolete1 (Unlimited)3--SINGLE-unknown--R-PSFM-T3Not Qualified1SINGLE-65W-NPNNPN15 @ 3A 4V700μATO-220AB1.5V @ 1A, 6A60V6A2MHz---------------------BD243---------1.5 V65W
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