STMicroelectronics BD241A
- Part Number:
- BD241A
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2846942-BD241A
- Description:
- TRANS NPN 60V 3A TO-220
- Datasheet:
- BD241-42A/B/C
STMicroelectronics BD241A technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics BD241A.
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Supplier Device PackageTO-220AB
- Operating Temperature150°C TJ
- PackagingTube
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Power - Max40W
- Transistor TypeNPN
- DC Current Gain (hFE) (Min) @ Ic, Vce25 @ 1A 4V
- Current - Collector Cutoff (Max)300μA
- Vce Saturation (Max) @ Ib, Ic1.2V @ 600mA, 3A
- Voltage - Collector Emitter Breakdown (Max)60V
- Current - Collector (Ic) (Max)3A
- RoHS StatusNon-RoHS Compliant
BD241A Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 25 @ 1A 4V.When VCE saturation is 1.2V @ 600mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Supplier package TO-220AB contains the product.The device has a 60V maximal voltage - Collector Emitter Breakdown.
BD241A Features
the DC current gain for this device is 25 @ 1A 4V
the vce saturation(Max) is 1.2V @ 600mA, 3A
the supplier device package of TO-220AB
BD241A Applications
There are a lot of Rochester Electronics, LLC
BD241A applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 25 @ 1A 4V.When VCE saturation is 1.2V @ 600mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Supplier package TO-220AB contains the product.The device has a 60V maximal voltage - Collector Emitter Breakdown.
BD241A Features
the DC current gain for this device is 25 @ 1A 4V
the vce saturation(Max) is 1.2V @ 600mA, 3A
the supplier device package of TO-220AB
BD241A Applications
There are a lot of Rochester Electronics, LLC
BD241A applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BD241A More Descriptions
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Trans GP BJT NPN 60V 3A 3-Pin(3 Tab) TO-220 Tube
Transistor NPN BD241/BD241A SGS THOMSON Ampere=3 TO220
Trans GP BJT NPN 60V 3A 3-Pin(3 Tab) TO-220 Tube
Transistor NPN BD241/BD241A SGS THOMSON Ampere=3 TO220
The three parts on the right have similar specifications to BD241A.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Power - MaxTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)RoHS StatusBase Part NumberVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):View Compare
-
BD241AThrough HoleTO-220-3TO-220AB150°C TJTubeObsolete1 (Unlimited)40WNPN25 @ 1A 4V300μA1.2V @ 600mA, 3A60V3ANon-RoHS Compliant----------------
-
Through HoleTO-220-3TO-220-3150°C TJTubeObsolete1 (Unlimited)40WPNP25 @ 1A 4V300μA1.2V @ 600mA, 3A45V3A-BD242--------------
-
----------------100V1.5V @ 1A, 6ANPNTO-220-65WBulkTO-220-3150°C (TJ)Through Hole-15 @ 3A, 4V700µA6A
-
Through HoleTO-220-3TO-220-3150°C TJTubeObsolete1 (Unlimited)65WNPN15 @ 3A 4V700μA1.5V @ 1A, 6A60V6A-BD243--------------
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