ON Semiconductor BD139G
- Part Number:
- BD139G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2845249-BD139G
- Description:
- TRANS NPN 80V 1.5A TO225AA
- ECAD Model:
-
- Datasheet:
- BD139G
ON Semiconductor BD139G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BD139G.
- Lifecycle StatusACTIVE (Last Updated: 1 day ago)
- Factory Lead Time9 Weeks
- Contact PlatingTin
- Mounting TypeThrough Hole
- Package / CaseTO-225AA, TO-126-3
- Surface MountNO
- Number of Pins3
- Weight4.535924g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingBulk
- Published1999
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC80V
- Max Power Dissipation1.25W
- Peak Reflow Temperature (Cel)260
- Current Rating1.5A
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberBD139
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation1.25W
- Transistor ApplicationAMPLIFIER
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)80V
- Max Collector Current1.5A
- DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 150mA 2V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
- Collector Emitter Breakdown Voltage80V
- Collector Emitter Saturation Voltage500mV
- Collector Base Voltage (VCBO)80V
- Emitter Base Voltage (VEBO)5V
- hFE Min25
- Height11.04mm
- Length7.74mm
- Width2.66mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
BD139G Overview
This device has a DC current gain of 40 @ 150mA 2V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 500mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 1.5A.The maximum collector current is 1.5A volts.
BD139G Features
the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1.5A
BD139G Applications
There are a lot of ON Semiconductor
BD139G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 40 @ 150mA 2V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 500mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 1.5A.The maximum collector current is 1.5A volts.
BD139G Features
the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1.5A
BD139G Applications
There are a lot of ON Semiconductor
BD139G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BD139G More Descriptions
ON Semi BD139G NPN Bipolar Transistor, 1.5 A, 80 V, 3-Pin TO-225 | ON Semiconductor BD139G
1.5 A, 80 V NPN Power Bipolar Junction Transistor
Trans GP BJT NPN 80V 1.5A 1250mW 3-Pin(3 Tab) TO-225 Box
80V 1.25W 1.5A NPN TO-225AA Bipolar Transistors - BJT ROHS
BD Series 80 V 1.5 A Plastic Medium Power Silicon NPN Transistor - TO-225AA
Power Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-225AA, Plastic/Epoxy, 3 Pin
TRANSISTOR, NPN, TO-225AA; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: -; Power Dissipation Pd: 1.25W; DC Collector Current: 1.5A; DC Current Gain hFE: 40hFE; Transistor Case Sty
This series of plastic medium-power silicon NPN transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.
Bipolar Transistor, Npn, 80V To-225; Transistor Polarity:Npn; Collector Emitter Voltage Max:80V; Continuous Collector Current:1.5A; Power Dissipation:1.25W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Transition Frequency:- Rohs Compliant: Yes |Onsemi BD139G.
1.5 A, 80 V NPN Power Bipolar Junction Transistor
Trans GP BJT NPN 80V 1.5A 1250mW 3-Pin(3 Tab) TO-225 Box
80V 1.25W 1.5A NPN TO-225AA Bipolar Transistors - BJT ROHS
BD Series 80 V 1.5 A Plastic Medium Power Silicon NPN Transistor - TO-225AA
Power Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-225AA, Plastic/Epoxy, 3 Pin
TRANSISTOR, NPN, TO-225AA; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: -; Power Dissipation Pd: 1.25W; DC Collector Current: 1.5A; DC Current Gain hFE: 40hFE; Transistor Case Sty
This series of plastic medium-power silicon NPN transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.
Bipolar Transistor, Npn, 80V To-225; Transistor Polarity:Npn; Collector Emitter Voltage Max:80V; Continuous Collector Current:1.5A; Power Dissipation:1.25W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Transition Frequency:- Rohs Compliant: Yes |Onsemi BD139G.
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
09 October 2023
Lithium CR2450 Battery Symbol, Equivalent, Specifications and Uses
Ⅰ. What is CR2450 battery?Ⅱ. CR2450 symbol and footprintⅢ. Specifications of CR2450 batteryⅣ. What are the features of CR2450 battery?Ⅴ. What are the uses of CR2450 battery?Ⅵ. What... -
10 October 2023
Get to know the Lithium Coin Cell CR2354
Ⅰ. What is a button battery?Ⅱ. What is CR2354 battery?Ⅲ. Dimensions of CR2354 batteryⅣ. Specifications of CR2354 batteryⅤ. Features of CR2354 batteryⅥ. What are the uses of CR2354... -
10 October 2023
IRF4905 Mosfet Transistor: Equivalent, Features, Working Principle and Other Details
Ⅰ. Overview of IRF4905Ⅱ. Pin configuration, symbol and footprint of IRF4905Ⅲ. Technical parameters of IRF4905Ⅳ. Features of IRF4905Ⅴ. Working principle of IRF4905Ⅵ. Dimensions and package of IRF4905Ⅶ. How... -
11 October 2023
STM8S103F3P6 Microcontroller Equivalent, Features and Pinout Configuration
Ⅰ. What is STM8S103F3P6 microcontroller?Ⅱ. Symbol and footprint of STM8S103F3P6Ⅲ. Technical parameters of STM8S103F3P6Ⅳ. Features of STM8S103F3P6Ⅴ. Size and package of STM8S103F3P6Ⅵ. Electrical characteristics of STM8S103F3P6Ⅶ. Pinout configuration...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.