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BD139-10

STMicroelectronics BD139-10

Part Number:
BD139-10
Manufacturer:
STMicroelectronics
Ventron No:
2466654-BD139-10
Description:
TRANS NPN 80V 1.5A SOT-32
ECAD Model:
Datasheet:
BD139-10

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Specifications
STMicroelectronics BD139-10 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics BD139-10.
  • Lifecycle Status
    ACTIVE (Last Updated: 6 months ago)
  • Factory Lead Time
    8 Weeks
  • Contact Plating
    Tin
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-225AA, TO-126-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Tube
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Subcategory
    Other Transistors
  • Max Power Dissipation
    1.25W
  • Base Part Number
    BD139
  • Pin Count
    3
  • Number of Elements
    1
  • Number of Channels
    1
  • Element Configuration
    Single
  • Power Dissipation
    1.25W
  • Transistor Application
    AMPLIFIER
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    80V
  • Max Collector Current
    1.5A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    40 @ 150mA 2V
  • Current - Collector Cutoff (Max)
    100nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    500mV @ 50mA, 500mA
  • Collector Emitter Breakdown Voltage
    80V
  • Transition Frequency
    250MHz
  • Collector Emitter Saturation Voltage
    500mV
  • Collector Base Voltage (VCBO)
    80V
  • Emitter Base Voltage (VEBO)
    5V
  • hFE Min
    63
  • Height
    10.8mm
  • Length
    7.8mm
  • Width
    2.7mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
Description
BD139-10 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 150mA 2V.With a collector emitter saturation voltage of 500mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 50mA, 500mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 250MHz is present in the part.Collector current can be as low as 1.5A volts at its maximum.

BD139-10 Features
the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 250MHz


BD139-10 Applications
There are a lot of STMicroelectronics
BD139-10 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
BD139-10 More Descriptions
BD139 Series 80 V 3 mA Through Hole NPN Epitaxial Transistor - SOT-32
Transistor Bipolar NPN 80V 1.5A SOT32
Power Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
Trans Gp Bjt Npn 80V 1.5A 1250mW 3-Pin(3 Tab) Sot-32 Tube
TRANSISTOR, NPN, SOT-32; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Power Dissipation Pd:1.25W; DC Collector Current:1.5A; DC Current Gain hFE:40; Transistor Case Style:SOT-32; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Collector Emitter Voltage Vces:500mV; Continuous Collector Current Ic Max:3A; Current Ic Continuous a Max:1.5A; Current Ic hFE:500mA; Full Power Rating Temperature:25°C; Hfe Min:25; No. of Transistors:1; Package / Case:SOT-32; Power Dissipation Pd:1.25W; Power Dissipation Ptot Max:12.5W; Termination Type:SMD; Voltage Vcbo:80V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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