Fairchild/ON Semiconductor BCX71J
- Part Number:
- BCX71J
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2845844-BCX71J
- Description:
- TRANS PNP 45V 0.1A SOT-23
- Datasheet:
- BCX71J
Fairchild/ON Semiconductor BCX71J technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor BCX71J.
- Lifecycle StatusLAST SHIPMENTS (Last Updated: 5 days ago)
- Factory Lead Time6 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight30mg
- PackagingTape & Reel (TR)
- Published2000
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Max Operating Temperature150°C
- Min Operating Temperature-65°C
- SubcategoryOther Transistors
- Voltage - Rated DC-45V
- Max Power Dissipation350mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Current Rating-100mA
- Base Part NumberBCX71
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation350mW
- Gain Bandwidth Product250MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)45V
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce250 @ 2mA 5V
- Current - Collector Cutoff (Max)20nA
- Vce Saturation (Max) @ Ib, Ic550mV @ 1.25mA, 50mA
- Collector Emitter Breakdown Voltage45V
- Max Frequency1MHz
- Collector Emitter Saturation Voltage-550mV
- Max Breakdown Voltage45V
- Collector Base Voltage (VCBO)-45V
- Emitter Base Voltage (VEBO)-5V
- hFE Min250
- Turn Off Time-Max (toff)800ns
- Height970μm
- Length2.9mm
- Width1.3mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
BCX71J Overview
This device has a DC current gain of 250 @ 2mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -550mV.A VCE saturation (Max) of 550mV @ 1.25mA, 50mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.This device has a current rating of -100mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.A breakdown input voltage of 45V volts can be used.A maximum collector current of 100mA volts is possible.
BCX71J Features
the DC current gain for this device is 250 @ 2mA 5V
a collector emitter saturation voltage of -550mV
the vce saturation(Max) is 550mV @ 1.25mA, 50mA
the emitter base voltage is kept at -5V
the current rating of this device is -100mA
BCX71J Applications
There are a lot of ON Semiconductor
BCX71J applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 250 @ 2mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -550mV.A VCE saturation (Max) of 550mV @ 1.25mA, 50mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.This device has a current rating of -100mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.A breakdown input voltage of 45V volts can be used.A maximum collector current of 100mA volts is possible.
BCX71J Features
the DC current gain for this device is 250 @ 2mA 5V
a collector emitter saturation voltage of -550mV
the vce saturation(Max) is 550mV @ 1.25mA, 50mA
the emitter base voltage is kept at -5V
the current rating of this device is -100mA
BCX71J Applications
There are a lot of ON Semiconductor
BCX71J applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BCX71J More Descriptions
BCX71J Series 45 V 100 mA Surface Mount PNP General Purpose Transistor -SOT-23-3
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon
Trans GP BJT PNP 45V 0.1A 3-Pin SOT-23 T/R - Tape and Reel
Bipolar Transistor; Transistor Polarity:PNP; Collector Emitter Voltage, V(br)ceo:-45V; Power Dissipation, Pd:350mW; DC Collector Current:-100mA; DC Current Gain Max (hfe):250; No. of Pins:3; Leaded Process Compatible:Yes ;RoHS Compliant: Yes
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon
Trans GP BJT PNP 45V 0.1A 3-Pin SOT-23 T/R - Tape and Reel
Bipolar Transistor; Transistor Polarity:PNP; Collector Emitter Voltage, V(br)ceo:-45V; Power Dissipation, Pd:350mW; DC Collector Current:-100mA; DC Current Gain Max (hfe):250; No. of Pins:3; Leaded Process Compatible:Yes ;RoHS Compliant: Yes
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