Nexperia USA Inc. BCX56-16,115
- Part Number:
- BCX56-16,115
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 3068658-BCX56-16,115
- Description:
- TRANS NPN 80V 1A SOT89
- Datasheet:
- BCX56-16,115
Nexperia USA Inc. BCX56-16,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BCX56-16,115.
- Factory Lead Time4 Weeks
- Mounting TypeSurface Mount
- Package / CaseTO-243AA
- Surface MountYES
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2007
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- HTS Code8541.29.00.75
- Terminal PositionSINGLE
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberBCX56
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE
- Case ConnectionCOLLECTOR
- Power - Max1.25W
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA 2V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
- Voltage - Collector Emitter Breakdown (Max)80V
- Current - Collector (Ic) (Max)1A
- Transition Frequency180MHz
- Frequency - Transition180MHz
- RoHS StatusROHS3 Compliant
BCX56-16,115 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 150mA 2V.When VCE saturation is 500mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).In the part, the transition frequency is 180MHz.The device has a 80V maximal voltage - Collector Emitter Breakdown.
BCX56-16,115 Features
the DC current gain for this device is 100 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
a transition frequency of 180MHz
BCX56-16,115 Applications
There are a lot of Nexperia USA Inc.
BCX56-16,115 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 150mA 2V.When VCE saturation is 500mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).In the part, the transition frequency is 180MHz.The device has a 80V maximal voltage - Collector Emitter Breakdown.
BCX56-16,115 Features
the DC current gain for this device is 100 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
a transition frequency of 180MHz
BCX56-16,115 Applications
There are a lot of Nexperia USA Inc.
BCX56-16,115 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BCX56-16,115 More Descriptions
Transistor General Purpose BJT NPN 80 Volt 1A Automotive 4-Pin(3 Tab) SOT-89
Trans GP BJT NPN 80V 1A 1350mW Automotive 4-Pin(3 Tab) SOT-89 T/R
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-243AA
BCX56-Q series - 80 V, 1 A NPN medium power transistors
Bipolar Transistors - BJT NPN MED 1A 80V
Transistor NPN, SOT-89-3 80V 1ASurface Mount
TRANSISTOR, NPN, 80V, 1A, SOT-89-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: 180MHz; Power Dissipation Pd: 500mW; DC Collector Current: 1A; DC Current Gain hFE: 100hFE; Transistor Case Style: SOT-89; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: BCX56 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Operating Temperature Min: -65°C
Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) A = 1 / Collector-Emitter Voltage (Vceo) V = 80 / DC Current Gain (hFE) = 250 / Collector-Base Voltage (Vcbo) V = 100 / Emitter-Base Voltage (Vebo) V = 5 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 100 / Power Dissipation (Pd) mW = 500 / Package Type = SOT-89 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Collector Emitter Saturation Voltage Max. (Vce(sat)) mV = 500 / Base Emitter Saturation Voltage Max. (Vbe(sat)) V = 1
Trans GP BJT NPN 80V 1A 1350mW Automotive 4-Pin(3 Tab) SOT-89 T/R
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-243AA
BCX56-Q series - 80 V, 1 A NPN medium power transistors
Bipolar Transistors - BJT NPN MED 1A 80V
Transistor NPN, SOT-89-3 80V 1ASurface Mount
TRANSISTOR, NPN, 80V, 1A, SOT-89-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: 180MHz; Power Dissipation Pd: 500mW; DC Collector Current: 1A; DC Current Gain hFE: 100hFE; Transistor Case Style: SOT-89; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: BCX56 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Operating Temperature Min: -65°C
Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) A = 1 / Collector-Emitter Voltage (Vceo) V = 80 / DC Current Gain (hFE) = 250 / Collector-Base Voltage (Vcbo) V = 100 / Emitter-Base Voltage (Vebo) V = 5 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 100 / Power Dissipation (Pd) mW = 500 / Package Type = SOT-89 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Collector Emitter Saturation Voltage Max. (Vce(sat)) mV = 500 / Base Emitter Saturation Voltage Max. (Vbe(sat)) V = 1
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