ON Semiconductor BCX56-10R1
- Part Number:
- BCX56-10R1
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2467078-BCX56-10R1
- Description:
- TRANS NPN 80V 1A SOT89
- Datasheet:
- BCX56-10R1
ON Semiconductor BCX56-10R1 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BCX56-10R1.
- Mounting TypeSurface Mount
- Package / CaseTO-243AA
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingTape & Reel (TR)
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishTIN LEAD
- Terminal PositionSINGLE
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codeunknown
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- JESD-30 CodeR-PSSO-F3
- Qualification StatusCOMMERCIAL
- Number of Elements1
- ConfigurationSINGLE
- Power - Max1.56W
- Transistor ApplicationAMPLIFIER
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- DC Current Gain (hFE) (Min) @ Ic, Vce63 @ 150mA 2V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
- Voltage - Collector Emitter Breakdown (Max)80V
- Current - Collector (Ic) (Max)1A
- Transition Frequency130MHz
- Frequency - Transition130MHz
- RoHS StatusNon-RoHS Compliant
BCX56-10R1 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 63 @ 150mA 2V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 50mA, 500mA.A transition frequency of 130MHz is present in the part.A 80V maximal voltage - Collector Emitter Breakdown is present in the device.
BCX56-10R1 Features
the DC current gain for this device is 63 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
a transition frequency of 130MHz
BCX56-10R1 Applications
There are a lot of Rochester Electronics, LLC
BCX56-10R1 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 63 @ 150mA 2V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 50mA, 500mA.A transition frequency of 130MHz is present in the part.A 80V maximal voltage - Collector Emitter Breakdown is present in the device.
BCX56-10R1 Features
the DC current gain for this device is 63 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
a transition frequency of 130MHz
BCX56-10R1 Applications
There are a lot of Rochester Electronics, LLC
BCX56-10R1 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BCX56-10R1 More Descriptions
Tape & Reel (TR) Surface Mount NPN SINGLE Bipolar (BJT) Transistor 63 @ 150mA 2V 100nA ICBO 1.56W 130MHz
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon
BCX56-10R1, SINGLE BIPOLAR TRANSISTORS;
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon
BCX56-10R1, SINGLE BIPOLAR TRANSISTORS;
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