Nexperia USA Inc. BCX56,115
- Part Number:
- BCX56,115
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 2464471-BCX56,115
- Description:
- TRANS NPN 80V 1A SOT89
- Datasheet:
- BCP56,BCX56,BC56PA Datsheet
Nexperia USA Inc. BCX56,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BCX56,115.
- Factory Lead Time4 Weeks
- Mounting TypeSurface Mount
- Package / CaseTO-243AA
- Surface MountYES
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2007
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- HTS Code8541.29.00.75
- Terminal PositionSINGLE
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberBCX56
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE
- Case ConnectionCOLLECTOR
- Power - Max1.25W
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- DC Current Gain (hFE) (Min) @ Ic, Vce63 @ 150mA 2V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
- Voltage - Collector Emitter Breakdown (Max)80V
- Current - Collector (Ic) (Max)1A
- Transition Frequency180MHz
- Frequency - Transition180MHz
- RoHS StatusROHS3 Compliant
BCX56,115 Overview
This device has a DC current gain of 63 @ 150mA 2V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).In this part, there is a transition frequency of 180MHz.Detection of Collector Emitter Breakdown at 80V maximal voltage is present.
BCX56,115 Features
the DC current gain for this device is 63 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
a transition frequency of 180MHz
BCX56,115 Applications
There are a lot of Nexperia USA Inc.
BCX56,115 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 63 @ 150mA 2V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).In this part, there is a transition frequency of 180MHz.Detection of Collector Emitter Breakdown at 80V maximal voltage is present.
BCX56,115 Features
the DC current gain for this device is 63 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
a transition frequency of 180MHz
BCX56,115 Applications
There are a lot of Nexperia USA Inc.
BCX56,115 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BCX56,115 More Descriptions
Transistor: NPN; bipolar; 80V; 1A; 0.5W; -55 150 deg.C; SMD; SOT89
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-243AA
Trans GP BJT NPN 80V 1A 1350mW Automotive 4-Pin(3 Tab) SOT-89 T/R
BCX56-Q series - 80 V, 1 A NPN medium power transistors
TRANSISTOR, NPN, SOT-89; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:180MHz; Power Dissipation Pd:500mW; DC Collector Current:1A; DC Current Gain hFE:63; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOT-89; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-243AA
Trans GP BJT NPN 80V 1A 1350mW Automotive 4-Pin(3 Tab) SOT-89 T/R
BCX56-Q series - 80 V, 1 A NPN medium power transistors
TRANSISTOR, NPN, SOT-89; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:180MHz; Power Dissipation Pd:500mW; DC Collector Current:1A; DC Current Gain hFE:63; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOT-89; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)
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