ON Semiconductor BCX17LT1G
- Part Number:
- BCX17LT1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2845928-BCX17LT1G
- Description:
- TRANS PNP 45V 0.5A SOT23
- Datasheet:
- BCX17LT1G
ON Semiconductor BCX17LT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BCX17LT1G.
- Lifecycle StatusACTIVE (Last Updated: 4 days ago)
- Factory Lead Time4 Weeks
- Contact PlatingTin
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingCut Tape (CT)
- Published2004
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC-45V
- Max Power Dissipation300mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating-500mA
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberBCX17
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation300mW
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)45V
- Max Collector Current500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 100mA 1V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic620mV @ 50mA, 500mA
- Collector Emitter Breakdown Voltage45V
- Collector Emitter Saturation Voltage620mV
- Max Breakdown Voltage45V
- Collector Base Voltage (VCBO)50V
- Emitter Base Voltage (VEBO)5V
- hFE Min100
- Height940μm
- Length2.9mm
- Width1.3mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
BCX17LT1G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 100mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 620mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 620mV @ 50mA, 500mA.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is -500mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The breakdown input voltage is 45V volts.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
BCX17LT1G Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 620mV
the vce saturation(Max) is 620mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -500mA
BCX17LT1G Applications
There are a lot of ON Semiconductor
BCX17LT1G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 100mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 620mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 620mV @ 50mA, 500mA.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is -500mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The breakdown input voltage is 45V volts.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
BCX17LT1G Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 620mV
the vce saturation(Max) is 620mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -500mA
BCX17LT1G Applications
There are a lot of ON Semiconductor
BCX17LT1G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BCX17LT1G More Descriptions
ON Semi BCX17LT1G PNP Bipolar Transistor; 0.5 A; 45 V; 3-Pin SOT-23
Trans GP BJT PNP 45V 0.5A 3-Pin SOT-23 T/R - Tape and Reel
BCX Series 45 V 500 mA SMT PNP Silicon General Purpose Transistor - SOT-23
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Transistor, PNP, -45V; Transistor POLARI; Transistor, PNP, -45V; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:-; Power Dissipation Pd:300mW; DC Collector Current:500mA; DC Current Gain hFE:100; No. of Pins:3; MSL:MSL 1 - Unlimited
Trans GP BJT PNP 45V 0.5A 3-Pin SOT-23 T/R - Tape and Reel
BCX Series 45 V 500 mA SMT PNP Silicon General Purpose Transistor - SOT-23
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Transistor, PNP, -45V; Transistor POLARI; Transistor, PNP, -45V; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:-; Power Dissipation Pd:300mW; DC Collector Current:500mA; DC Current Gain hFE:100; No. of Pins:3; MSL:MSL 1 - Unlimited
The three parts on the right have similar specifications to BCX17LT1G.
-
ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSeriesTerminal FinishHTS CodeQualification StatusConfigurationPower - MaxTransistor ApplicationVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Transition FrequencyFrequency - TransitionVCEsat-MaxMountWeightReference StandardJESD-30 CodeGain Bandwidth ProductContinuous Collector CurrentSupplier Device PackageMax Operating TemperatureMin Operating TemperaturePolarityView Compare
-
BCX17LT1GACTIVE (Last Updated: 4 days ago)4 WeeksTinSurface MountTO-236-3, SC-59, SOT-23-3YES3SILICON-55°C~150°C TJCut Tape (CT)2004e3yesActive1 (Unlimited)3EAR99Other Transistors-45V300mWDUALGULL WING260-500mA40BCX1731Single300mWPNPPNP45V500mA100 @ 100mA 1V100nA ICBO620mV @ 50mA, 500mA45V620mV45V50V5V100940μm2.9mm1.3mmNo SVHCNoROHS3 CompliantLead Free-----------------------
-
-4 Weeks-Surface MountTO-236-3, SC-59, SOT-23-3YES3SILICON150°C TJTape & Reel (TR)2009e3-Active1 (Unlimited)3EAR99---DUALGULL WING260-40BCX1731--PNPPNP--100 @ 100mA 1V100nA ICBO620mV @ 50mA, 500mA-----------ROHS3 Compliant-Automotive, AEC-Q101Tin (Sn)8541.21.00.95Not QualifiedSINGLE250mWSWITCHING45V500mA80MHz80MHz0.62 V----------
-
---Surface MountTO-236-3, SC-59, SOT-23-3--SILICON-55°C~150°C TJCut Tape (CT)2012e3-Obsolete1 (Unlimited)3EAR99-45V330mWDUALGULL WING260500mA40BCX1931Single-NPNNPN620mV500mA100 @ 100mA 1V100nA ICBO620mV @ 50mA, 500mA45V-45V-5V-1mm3.05mm1.4mm--ROHS3 CompliantLead Free-Matte Tin (Sn)8541.21.00.75Not Qualified-----200MHz--Surface Mount7.994566mgCECC50002-236R-PDSO-G3200MHz500mA----
-
LAST SHIPMENTS (Last Updated: 2 days ago)7 WeeksTinSurface MountTO-236-3, SC-59, SOT-23-3-3--55°C~150°C TJTape & Reel (TR)2002--Obsolete1 (Unlimited)---45V300mW---500mA-BCX19-1Single300mW-NPN45V500mA100 @ 100mA 1V100nA ICBO620mV @ 50mA, 500mA45V620mV45V50V5V100930μm2.9mm1.3mmNo SVHCNoRoHS CompliantLead Free-----300mW-45V500mA160MHz--Surface Mount30mg----SOT-23-3150°C-55°CNPN
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
26 January 2024
What is NRF24L01 and How Does It Work?
Ⅰ. Overview of NRF24L01Ⅱ. Who is the manufacturer of NRF24L01?Ⅲ. Structural block diagram of NRF24L01Ⅳ. Applications of NRF24L01Ⅴ. Communication conditions of NRF24L01Ⅵ. Working modes of NRF24L01Ⅶ. Working principle... -
29 January 2024
2SC5200 Transistor Manufacturer, Specifications, Applications and Usage
Ⅰ. Overview of 2SC5200 transistorⅡ. Naming rules of 2SC5200 transistorⅢ. Symbol, footprint and pin configuration of 2SC5200Ⅳ. Manufacturer of 2SC5200 transistorⅤ. Specifications of 2SC5200 transistorⅥ. Applications of 2SC5200... -
29 January 2024
TQP3M9028 RF Amplifier Alternatives, Market Trend, Applications and Other Details
Ⅰ. TQP3M9028 descriptionⅡ. Manufacturer of TQP3M9028Ⅲ. Specifications of TQP3M9028Ⅳ. Market trend of TQP3M9028Ⅴ. How to choose TQP3M9028?Ⅵ. Absolute maximum ratings of TQP3M9028Ⅶ. Where is TQP3M9028 used?TQP3M9028 is a... -
30 January 2024
AD7606BSTZ Converter Technical Parameters, Characteristics, Working Principle and Package
Ⅰ. Overview of AD7606BSTZⅡ. Technical parameters of AD7606BSTZⅢ. Characteristics of AD7606BSTZⅣ. Absolute maximum ratings of AD7606BSTZⅤ. How does AD7606BSTZ work?Ⅵ. Package of AD7606BSTZⅦ. What are the applications of...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.