Fairchild/ON Semiconductor BCW66G

Name: BCW66G
Brand: Fairchild/ON Semiconductor
SKU: 2463197-BCW66G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BCW66G

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2463197-BCW66G

Description:: TRANS NPN 45V 1A SOT-23

ECAD Model:

Datasheet:: BCW66G

Specifications

Fairchild/ON Semiconductor BCW66G technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor BCW66G.

Lifecycle Status
LAST SHIPMENTS (Last Updated: 2 days ago)
Factory Lead Time
8 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Supplier Device Package
SOT-23-3
Weight
30mg
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2002
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Voltage - Rated DC
45V
Max Power Dissipation
350mW
Current Rating
1A
Frequency
100MHz
Base Part Number
BCW66
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Power Dissipation
350mW
Power - Max
350mW
Gain Bandwidth Product
170MHz
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
45V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
160 @ 100mA 1V
Current - Collector Cutoff (Max)
20nA
Vce Saturation (Max) @ Ib, Ic
700mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
45V
Voltage - Collector Emitter Breakdown (Max)
45V
Current - Collector (Ic) (Max)
1A
Max Frequency
100MHz
Collector Emitter Saturation Voltage
700mV
Max Breakdown Voltage
45V
Frequency - Transition
100MHz
Collector Base Voltage (VCBO)
75V
Emitter Base Voltage (VEBO)
5V
hFE Min
160
Height
930μm
Length
2.9mm
Width
1.3mm
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Lead Free
Lead Free

Description

BCW66G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 160 @ 100mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 700mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 700mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 1A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Single BJT transistor can take a breakdown input voltage of 45V volts.SOT-23-3 is the supplier device package for this product.This device displays a 45V maximum voltage - Collector Emitter Breakdown.During maximum operation, collector current can be as low as 1A volts.

BCW66G Features
the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
the supplier device package of SOT-23-3

BCW66G Applications
There are a lot of ON Semiconductor
BCW66G applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BCW66G More Descriptions

BCW66G Series NPN 350 mW 45 V 1 A SMT General Purpose Transistor - SOT-23
Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon
Bipolar Transistors - BJT SOT-23 NPN GP AMP
Trans GP BJT NPN 45V 1A 3-Pin SOT-23 T/R
Transistor; Transistor Type:Bipolar; Package/Case:SOT-23; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Current Rating:1A; Voltage Rating:45V ;RoHS Compliant: Yes
TRANSISTOR, NPN, SMD, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency Typ ft:100MHz; Power Dissipation Pd:350mW; DC Collector Current:1A; DC Current Gain hFE:160; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:700mV; Current Ic Continuous a Max:500mA; Gain Bandwidth ft Typ:100MHz; Hfe Min:160; Package / Case:SOT-23; Power Dissipation Pd:350mW; Termination Type:SMD

Product Comparison

The three parts on the right have similar specifications to BCW66G.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Supplier Device Package

Weight

Operating Temperature

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

Max Operating Temperature

Min Operating Temperature

Voltage - Rated DC

Max Power Dissipation

Current Rating

Frequency

Base Part Number

Number of Elements

Polarity

Element Configuration

Power Dissipation

Power - Max

Gain Bandwidth Product

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

Max Frequency

Collector Emitter Saturation Voltage

Max Breakdown Voltage

Frequency - Transition

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

Height

Length

Width

REACH SVHC

RoHS Status

Lead Free

Surface Mount

Transistor Element Material

Series

JESD-609 Code

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

HTS Code

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Configuration

Transistor Application

Polarity/Channel Type

Transition Frequency

VCEsat-Max

Turn Off Time-Max (toff)

Turn On Time-Max (ton)

Termination

Forward Current

Forward Voltage

Max Repetitive Reverse Voltage (Vrrm)

Max Forward Surge Current (Ifsm)

Radiation Hardening

View Compare
BCW66G

Fairchild/ON Semiconductor

LAST SHIPMENTS (Last Updated: 2 days ago)

8 Weeks

Tin

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

SOT-23-3

30mg

-55°C~150°C TJ

Tape & Reel (TR)

2002

Obsolete

1 (Unlimited)

150°C

-55°C

45V

350mW

1A

100MHz

BCW66

1

NPN

Single

350mW

350mW

170MHz

NPN

45V

1A

160 @ 100mA 1V

20nA

700mV @ 50mA, 500mA

45V

45V

1A

100MHz

700mV

45V

100MHz

75V

5V

160

930μm

2.9mm

1.3mm

No SVHC

RoHS Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
BCW60C

Fairchild/ON Semiconductor

-

-

-

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

SOT-23-3

30mg

-

Tape & Reel (TR)

2002

Obsolete

1 (Unlimited)

150°C

-

32V

350mW

100mA

125MHz

BCW60

1

NPN

Single

350mW

350mW

125MHz

NPN

32V

100mA

250 @ 2mA 5V

20nA

550mV @ 1.25mA, 50mA

32V

32V

100mA

-

550mV

-

125MHz

32V

5V

250

-

-

-

-

RoHS Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

BCW66G vs BCW60C
BCW61D,215

Nexperia USA Inc.

-

4 Weeks

-

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

-

-

150°C TJ

Tape & Reel (TR)

2002

Active

1 (Unlimited)

-

-

-

-

-

-

BCW61

1

-

-

-

250mW

-

PNP

-

-

380 @ 2mA 5V

20nA ICBO

550mV @ 1.25mA, 50mA

-

32V

100mA

-

-

-

100MHz

-

-

-

-

-

-

-

ROHS3 Compliant

-

YES

SILICON

Automotive, AEC-Q101

e3

3

EAR99

Tin (Sn)

LOW NOISE

8541.21.00.95

DUAL

GULL WING

260

40

3

R-PDSO-G3

Not Qualified

SINGLE

SWITCHING

PNP

100MHz

0.55 V

800ns

150ns

-

-

-

-

-

-

BCW66G vs BCW61D,215
BCW60B,215

Nexperia USA Inc.

-

4 Weeks

Tin

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

-

-

150°C TJ

Tape & Reel (TR)

2002

Active

1 (Unlimited)

-

-

-

250mW

-

250MHz

BCW60

1

-

Single

250mW

-

250MHz

NPN

32V

100mA

180 @ 2mA 5V

20nA ICBO

550mV @ 1.25mA, 50mA

32V

-

-

-

-

32V

-

32V

5V

20

-

-

-

No SVHC

ROHS3 Compliant

Lead Free

-

SILICON

Automotive, AEC-Q101

e3

3

EAR99

-

-

-

DUAL

GULL WING

260

40

3

-

-

-

SWITCHING

NPN

250MHz

-

800ns

-

SMD/SMT

100mA

550mV

40V

1A

No

BCW66G vs BCW60B,215