ON Semiconductor BCP68T1G

Name: BCP68T1G
Brand: ON Semiconductor
SKU: 2846095-BCP68T1G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BCP68T1G

Manufacturer:: ON Semiconductor

Ventron No:: 2846095-BCP68T1G

Description:: TRANS NPN 20V 1A SOT223

ECAD Model:

Datasheet:: BCP68T1G

Specifications

ON Semiconductor BCP68T1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BCP68T1G.

Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Factory Lead Time
11 Weeks
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Surface Mount
YES
Number of Pins
4
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Cut Tape (CT)
Published
2005
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
20V
Max Power Dissipation
1.5W
Terminal Position
DUAL
Terminal Form
GULL WING
Current Rating
1A
Frequency
60MHz
Base Part Number
BCP68
Pin Count
4
Number of Elements
1
Element Configuration
Single
Power Dissipation
1.5W
Case Connection
COLLECTOR
Gain Bandwidth Product
60MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
20V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
85 @ 500mA 1V
Current - Collector Cutoff (Max)
10μA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 100mA, 1A
Collector Emitter Breakdown Voltage
20V
Transition Frequency
60MHz
Collector Emitter Saturation Voltage
500mV
Max Breakdown Voltage
20V
Collector Base Voltage (VCBO)
25V
Emitter Base Voltage (VEBO)
5V
hFE Min
50
Height
1.651mm
Length
6.6802mm
Width
3.7084mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BCP68T1G Overview
DC current gain in this device equals 85 @ 500mA 1V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 500mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 100mA, 1A.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 1A current rating.As a result, the part has a transition frequency of 60MHz.Breakdown input voltage is 20V volts.In extreme cases, the collector current can be as low as 1A volts.

BCP68T1G Features
the DC current gain for this device is 85 @ 500mA 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 60MHz

BCP68T1G Applications
There are a lot of ON Semiconductor
BCP68T1G applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BCP68T1G More Descriptions

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Transistor, BIPOL, NPN, 20V, SOT-223-4; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:20V; Transition Frequency ft:60MHz; Power
This NPN Silicon Epitaxial Transistor is designed for use in low voltage high current applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications.
Transistor Polarity:Npn; Collector Emitter Voltage Max:20V; Continuous Collector Current:1A; Power Dissipation:1.5W; Transistor Mounting:Surface Mount; No. Of Pins:4Pins; Transition Frequency:60Mhz; Dc Current Gain Hfe Min:50Hfe Rohs Compliant: Yes |Onsemi BCP68T1G.
TRANS, BIPOL, NPN, 20V, SOT223; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 20V; Transition Frequency ft: 60MHz; Power Dissipation Pd: 1.5W; DC Collector Current: 1A; DC Current Gain hFE: 50hFE; Transistor Case Style: SOT-223; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 3 - 168 hours; SVHC: Lead (27-Jun-2018)

Certification