ON Semiconductor BCP56T3G

Name: BCP56T3G
Brand: ON Semiconductor
SKU: 3585036-BCP56T3G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BCP56T3G

Manufacturer:: ON Semiconductor

Ventron No:: 3585036-BCP56T3G

Description:: TRANS NPN 80V 1A SOT-223

ECAD Model:

Datasheet:: BCP56T3G

Specifications

ON Semiconductor BCP56T3G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BCP56T3G.

Lifecycle Status
ACTIVE (Last Updated: 4 days ago)
Factory Lead Time
8 Weeks
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Surface Mount
YES
Number of Pins
4
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2005
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
80V
Max Power Dissipation
1.5W
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
1A
Frequency
130MHz
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
BCP56
Pin Count
4
Number of Elements
1
Element Configuration
Single
Power Dissipation
1.5W
Case Connection
COLLECTOR
Transistor Application
AMPLIFIER
Gain Bandwidth Product
130MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 150mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
80V
Transition Frequency
130MHz
Collector Emitter Saturation Voltage
500mV
Max Breakdown Voltage
80V
Collector Base Voltage (VCBO)
100V
Emitter Base Voltage (VEBO)
5V
hFE Min
25
Height
1.63mm
Length
6.5mm
Width
3.5mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BCP56T3G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 150mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 500mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 1A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 130MHz.Single BJT transistor can take a breakdown input voltage of 80V volts.During maximum operation, collector current can be as low as 1A volts.

BCP56T3G Features
the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 130MHz

BCP56T3G Applications
There are a lot of ON Semiconductor
BCP56T3G applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BCP56T3G More Descriptions

Transistor, Bipolar,Si,NPN,Medium Power,VCEO 80VDC,IC 1A,PD 1.5W,SOT-223,hFE 25
Trans GP BJT NPN 80V 1A 4-Pin(3 Tab) SOT-223 T/R - Tape and Reel
BCP Series 80 V 1.5 A Surface Mount NPN Silicon Epitaxial Transistor - SOT-223
Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-261AA, Plastic/Epoxy, 4 Pin
NPN Bipolar Transistor hFE 40 to 250
80V 1.5W 1A 40@150mA2V 130MHz 500mV@500mA50mA NPN -65¡Í~ 150¡Í@(Tj) SOT-223 Bipolar Transistors - BJT ROHS
TRANSISTOR, BIPOL, NPN, 80V, SOT-223-4; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: 130MHz; Power Dissipation Pd: 1.5W; DC Collector Current: 1A; DC Current Gain hFE: 25hFE; Tran

Certification