Infineon Technologies BCP 56-10 E6433
- Part Number:
- BCP 56-10 E6433
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3585565-BCP 56-10 E6433
- Description:
- TRANS NPN 80V 1A SOT-223
- Datasheet:
- BCP54-56
Infineon Technologies BCP 56-10 E6433 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BCP 56-10 E6433.
- Mounting TypeSurface Mount
- Package / CaseTO-261-4, TO-261AA
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2010
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- ECCN CodeEAR99
- Terminal FinishMATTE TIN
- SubcategoryOther Transistors
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Reach Compliance Codecompliant
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberBCP56
- JESD-30 CodeR-PDSO-G4
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE
- Case ConnectionCOLLECTOR
- Power - Max2W
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- DC Current Gain (hFE) (Min) @ Ic, Vce63 @ 150mA 2V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
- Voltage - Collector Emitter Breakdown (Max)80V
- Current - Collector (Ic) (Max)1A
- Transition Frequency100MHz
- Frequency - Transition100MHz
- Power Dissipation-Max (Abs)1.5W
- RoHS StatusRoHS Compliant
BCP 56-10 E6433 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 63 @ 150mA 2V.When VCE saturation is 500mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).In the part, the transition frequency is 100MHz.The device has a 80V maximal voltage - Collector Emitter Breakdown.
BCP 56-10 E6433 Features
the DC current gain for this device is 63 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
a transition frequency of 100MHz
BCP 56-10 E6433 Applications
There are a lot of Infineon Technologies
BCP 56-10 E6433 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 63 @ 150mA 2V.When VCE saturation is 500mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).In the part, the transition frequency is 100MHz.The device has a 80V maximal voltage - Collector Emitter Breakdown.
BCP 56-10 E6433 Features
the DC current gain for this device is 63 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
a transition frequency of 100MHz
BCP 56-10 E6433 Applications
There are a lot of Infineon Technologies
BCP 56-10 E6433 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BCP 56-10 E6433 More Descriptions
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon
Compliant Surface Mount NPN 100 MHz Lead Free Tape and Reel SOT-223-4 1 A
TRANS NPN 80V 1A SOT-223
Compliant Surface Mount NPN 100 MHz Lead Free Tape and Reel SOT-223-4 1 A
TRANS NPN 80V 1A SOT-223
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