Nexperia USA Inc. BCP56-10,135
- Part Number:
- BCP56-10,135
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 2465074-BCP56-10,135
- Description:
- TRANS NPN 80V 1A SOT223
- Datasheet:
- BCP56-10,135
Nexperia USA Inc. BCP56-10,135 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BCP56-10,135.
- Factory Lead Time4 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-261-4, TO-261AA
- Number of Pins4
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2007
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- Terminal FinishTin (Sn)
- Max Power Dissipation960mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Frequency180MHz
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberBCP56
- Pin Count4
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation960mW
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product180MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)80V
- Max Collector Current1A
- DC Current Gain (hFE) (Min) @ Ic, Vce63 @ 150mA 2V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
- Collector Emitter Breakdown Voltage80V
- Transition Frequency180MHz
- Collector Base Voltage (VCBO)100V
- Emitter Base Voltage (VEBO)5V
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
BCP56-10,135 Overview
This device has a DC current gain of 63 @ 150mA 2V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.In this part, there is a transition frequency of 180MHz.The maximum collector current is 1A volts.
BCP56-10,135 Features
the DC current gain for this device is 63 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 180MHz
BCP56-10,135 Applications
There are a lot of Nexperia USA Inc.
BCP56-10,135 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 63 @ 150mA 2V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.In this part, there is a transition frequency of 180MHz.The maximum collector current is 1A volts.
BCP56-10,135 Features
the DC current gain for this device is 63 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 180MHz
BCP56-10,135 Applications
There are a lot of Nexperia USA Inc.
BCP56-10,135 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BCP56-10,135 More Descriptions
80V 1A 180MHz 960mW Surface Mount Bipolar (BJT) Transistor SOT-223
Transistor GP BJT NPN 80V 1A 4-Pin SOT-223
Trans GP BJT NPN 80V 1A Automotive 4-Pin(3 Tab) SC-73 T/R
Transistor, Bipolar Rohs Compliant: Yes |Nexperia BCP56-10,135
80V 650mW 1A 63@150mA2V 180MHz 500mV@500mA50mA NPN 150¡Í@(Tj) SOT-223 Bipolar Transistors - BJT ROHS
Transistor GP BJT NPN 80V 1A 4-Pin SOT-223
Trans GP BJT NPN 80V 1A Automotive 4-Pin(3 Tab) SC-73 T/R
Transistor, Bipolar Rohs Compliant: Yes |Nexperia BCP56-10,135
80V 650mW 1A 63@150mA2V 180MHz 500mV@500mA50mA NPN 150¡Í@(Tj) SOT-223 Bipolar Transistors - BJT ROHS
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