BCP56-10,135

Nexperia USA Inc. BCP56-10,135

Part Number:
BCP56-10,135
Manufacturer:
Nexperia USA Inc.
Ventron No:
2465074-BCP56-10,135
Description:
TRANS NPN 80V 1A SOT223
ECAD Model:
Datasheet:
BCP56-10,135

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Specifications
Nexperia USA Inc. BCP56-10,135 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BCP56-10,135.
  • Factory Lead Time
    4 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-261-4, TO-261AA
  • Number of Pins
    4
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2007
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    4
  • Terminal Finish
    Tin (Sn)
  • Max Power Dissipation
    960mW
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Frequency
    180MHz
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Base Part Number
    BCP56
  • Pin Count
    4
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    960mW
  • Case Connection
    COLLECTOR
  • Transistor Application
    SWITCHING
  • Gain Bandwidth Product
    180MHz
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    80V
  • Max Collector Current
    1A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    63 @ 150mA 2V
  • Current - Collector Cutoff (Max)
    100nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    500mV @ 50mA, 500mA
  • Collector Emitter Breakdown Voltage
    80V
  • Transition Frequency
    180MHz
  • Collector Base Voltage (VCBO)
    100V
  • Emitter Base Voltage (VEBO)
    5V
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
Description
BCP56-10,135 Overview
This device has a DC current gain of 63 @ 150mA 2V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.In this part, there is a transition frequency of 180MHz.The maximum collector current is 1A volts.

BCP56-10,135 Features
the DC current gain for this device is 63 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 180MHz


BCP56-10,135 Applications
There are a lot of Nexperia USA Inc.
BCP56-10,135 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
BCP56-10,135 More Descriptions
80V 1A 180MHz 960mW Surface Mount Bipolar (BJT) Transistor SOT-223
Transistor GP BJT NPN 80V 1A 4-Pin SOT-223
Trans GP BJT NPN 80V 1A Automotive 4-Pin(3 Tab) SC-73 T/R
Transistor, Bipolar Rohs Compliant: Yes |Nexperia BCP56-10,135
80V 650mW 1A 63@150mA2V 180MHz 500mV@500mA50mA NPN 150¡Í@(Tj) SOT-223 Bipolar Transistors - BJT ROHS
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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