Diodes Incorporated BCP5516TA

Name: BCP5516TA
Brand: Diodes Incorporated
SKU: 2464258-BCP5516TA
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BCP5516TA

Manufacturer:: Diodes Incorporated

Ventron No:: 2464258-BCP5516TA

Description:: TRANS NPN 60V 1A SOT223

ECAD Model:

Datasheet:: BCP5516TA

Specifications

Diodes Incorporated BCP5516TA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated BCP5516TA.

Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
4
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2011
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Additional Feature
HIGH RELIABILITY
Subcategory
Other Transistors
Max Power Dissipation
2W
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Frequency
150MHz
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
BCP55
Pin Count
4
Number of Elements
1
Element Configuration
Single
Power Dissipation
2W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
100MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
60V
Transition Frequency
150MHz
Collector Emitter Saturation Voltage
500mV
Max Breakdown Voltage
60V
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
5V
Height
1.65mm
Length
6.55mm
Width
3.55mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BCP5516TA Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 150mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 50mA, 500mA.The emitter base voltage can be kept at 5V for high efficiency.The part has a transition frequency of 150MHz.The breakdown input voltage is 60V volts.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.

BCP5516TA Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 150MHz

BCP5516TA Applications
There are a lot of Diodes Incorporated
BCP5516TA applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BCP5516TA More Descriptions

60V 2W 100@150mA,2V 1A NPN SOT-223 Bipolar Transistors - BJT ROHS
BCP55 Series 60 V 1 A Surface Mount NPN Medium Power Transistor - SOT-223-3
Trans GP BJT NPN 60V 1A Automotive 4-Pin(3 Tab) SOT-223 T/R
Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon
Trans GP BJT NPN 60V 1A 4Pin SOT223 | Diodes Inc BCP5516TA

Certification