Diodes Incorporated BCP5316TA
- Part Number:
- BCP5316TA
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 3585250-BCP5316TA
- Description:
- TRANS PNP 80V 1A SOT223
- Datasheet:
- BCP5316TA
Diodes Incorporated BCP5316TA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated BCP5316TA.
- Factory Lead Time15 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-261-4, TO-261AA
- Number of Pins4
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2011
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- ECCN CodeEAR99
- Additional FeatureHIGH RELIABILITY
- SubcategoryOther Transistors
- Voltage - Rated DC-80V
- Max Power Dissipation2W
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating-1A
- Frequency150MHz
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberBCP53
- Pin Count4
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation2W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product125MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)80V
- Max Collector Current1A
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA 2V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
- Collector Emitter Breakdown Voltage80V
- Transition Frequency150MHz
- Collector Emitter Saturation Voltage-500mV
- Max Breakdown Voltage80V
- Collector Base Voltage (VCBO)100V
- Emitter Base Voltage (VEBO)5V
- Continuous Collector Current-1A
- Height1.65mm
- Length6.7mm
- Width3.7mm
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
BCP5316TA Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 150mA 2V DC current gain.As it features a collector emitter saturation voltage of -500mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at -1A.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 150MHz in the part.Single BJT transistor can be broken down at a voltage of 80V volts.When collector current reaches its maximum, it can reach 1A volts.
BCP5316TA Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -1A
a transition frequency of 150MHz
BCP5316TA Applications
There are a lot of Diodes Incorporated
BCP5316TA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 150mA 2V DC current gain.As it features a collector emitter saturation voltage of -500mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at -1A.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 150MHz in the part.Single BJT transistor can be broken down at a voltage of 80V volts.When collector current reaches its maximum, it can reach 1A volts.
BCP5316TA Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -1A
a transition frequency of 150MHz
BCP5316TA Applications
There are a lot of Diodes Incorporated
BCP5316TA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BCP5316TA More Descriptions
Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin
BCP53 Series 80 V 1 A 2 W Surface Mount PNP Medium Power Transistor - SOT-223
TRANS PNP 80V 1A SOT223 / Trans GP BJT PNP 80V 1A 2000mW 4-Pin(3 Tab) SOT-223 T/R
Trans GP BJT PNP 80V 1A 4Pin SOT223 | Diodes Inc BCP5316TA
Trans, Pnp, 80V, 1A, 150Deg C, 2W Rohs Compliant: Yes |Diodes Inc. BCP5316TA
BCP53 Series 80 V 1 A 2 W Surface Mount PNP Medium Power Transistor - SOT-223
TRANS PNP 80V 1A SOT223 / Trans GP BJT PNP 80V 1A 2000mW 4-Pin(3 Tab) SOT-223 T/R
Trans GP BJT PNP 80V 1A 4Pin SOT223 | Diodes Inc BCP5316TA
Trans, Pnp, 80V, 1A, 150Deg C, 2W Rohs Compliant: Yes |Diodes Inc. BCP5316TA
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