ON Semiconductor BCP53-16T1G
- Part Number:
- BCP53-16T1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2845949-BCP53-16T1G
- Description:
- TRANS PNP 80V 1.5A SOT-223
- ECAD Model:
-
- Datasheet:
- BCP53-16T1G
ON Semiconductor BCP53-16T1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BCP53-16T1G.
- Lifecycle StatusACTIVE (Last Updated: 2 days ago)
- Factory Lead Time8 Weeks
- Contact PlatingTin
- Mounting TypeSurface Mount
- Package / CaseTO-261-4, TO-261AA
- Surface MountYES
- Number of Pins4
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2008
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- ECCN CodeEAR99
- Voltage - Rated DC-80V
- Max Power Dissipation1.5W
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating-1.5A
- Frequency50MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberBCP53
- Pin Count4
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation1.5W
- Case ConnectionCOLLECTOR
- Transistor ApplicationAMPLIFIER
- Gain Bandwidth Product50MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)80V
- Max Collector Current1.5A
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA 2V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
- Collector Emitter Breakdown Voltage80V
- Transition Frequency50MHz
- Collector Emitter Saturation Voltage-500mV
- Max Breakdown Voltage80V
- Collector Base Voltage (VCBO)100V
- Emitter Base Voltage (VEBO)5V
- hFE Min25
- Height1.57mm
- Length6.5mm
- Width3.5mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
BCP53-16T1G Overview
This device has a DC current gain of 100 @ 150mA 2V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of -500mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -1.5A.In this part, there is a transition frequency of 50MHz.As a result, it can handle voltages as low as 80V volts.The maximum collector current is 1.5A volts.
BCP53-16T1G Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -1.5A
a transition frequency of 50MHz
BCP53-16T1G Applications
There are a lot of ON Semiconductor
BCP53-16T1G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 100 @ 150mA 2V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of -500mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -1.5A.In this part, there is a transition frequency of 50MHz.As a result, it can handle voltages as low as 80V volts.The maximum collector current is 1.5A volts.
BCP53-16T1G Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -1.5A
a transition frequency of 50MHz
BCP53-16T1G Applications
There are a lot of ON Semiconductor
BCP53-16T1G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BCP53-16T1G More Descriptions
ON Semi BCP53-16T1G PNP Bipolar Transistor, 1.5 A, 80 V SOT-223 | ON Semiconductor BCP53-16T1G
Trans GP BJT PNP 80V 1.5A 1500mW Automotive 4-Pin(3 Tab) SOT-223 T/R
BCP Series 80 V 1.5 A Surface Mount PNP Silicon Epitaxial Transistor - SOT-223
PNP 80 V Bipolar Transistor hFE 100 to 250
Power Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-261AA, Plastic/Epoxy, 4 Pin
Transistor, PNP, -80V, -1.5A, SOT-223-4; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-80V; Transition Frequency ft:50MHz; Power
Bipolar Transistor, Pnp, -80V, Full Reel; Transistor Polarity:Pnp; Collector Emitter Voltage Max:80V; Continuous Collector Current:1.5A; Power Dissipation:1.5W; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Product Range:- Rohs Compliant: Yes |Onsemi BCP53-16T1G.
TRANSISTOR, PNP, -80V, -1.5A, SOT-223-4; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -80V; Transition Frequency ft: 50MHz; Power Dissipation Pd: 1.5W; DC Collector Current: -1.5A; DC Current Gain hFE: 100hFE; Transistor Case Style: SOT-223; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Operating Temperature Min: -65°C
Trans GP BJT PNP 80V 1.5A 1500mW Automotive 4-Pin(3 Tab) SOT-223 T/R
BCP Series 80 V 1.5 A Surface Mount PNP Silicon Epitaxial Transistor - SOT-223
PNP 80 V Bipolar Transistor hFE 100 to 250
Power Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-261AA, Plastic/Epoxy, 4 Pin
Transistor, PNP, -80V, -1.5A, SOT-223-4; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-80V; Transition Frequency ft:50MHz; Power
Bipolar Transistor, Pnp, -80V, Full Reel; Transistor Polarity:Pnp; Collector Emitter Voltage Max:80V; Continuous Collector Current:1.5A; Power Dissipation:1.5W; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Product Range:- Rohs Compliant: Yes |Onsemi BCP53-16T1G.
TRANSISTOR, PNP, -80V, -1.5A, SOT-223-4; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -80V; Transition Frequency ft: 50MHz; Power Dissipation Pd: 1.5W; DC Collector Current: -1.5A; DC Current Gain hFE: 100hFE; Transistor Case Style: SOT-223; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Operating Temperature Min: -65°C
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