Diodes Incorporated BCP52TA
- Part Number:
- BCP52TA
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2464936-BCP52TA
- Description:
- TRANS PNP 60V 1A SOT223-4
- ECAD Model:
-
- Datasheet:
- BCP52TA
Diodes Incorporated BCP52TA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated BCP52TA.
- Factory Lead Time16 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-261-4, TO-261AA
- Number of Pins4
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2011
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- ECCN CodeEAR99
- Additional FeatureHIGH RELIABILITY
- SubcategoryOther Transistors
- Voltage - Rated DC-60V
- Max Power Dissipation2W
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating-1A
- Frequency150MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberBCP52
- Qualification StatusNot Qualified
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation2W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product125MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)60V
- Max Collector Current1A
- DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 150mA 2V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
- Collector Emitter Breakdown Voltage60V
- Transition Frequency150MHz
- Collector Emitter Saturation Voltage-500mV
- Max Breakdown Voltage60V
- Collector Base Voltage (VCBO)60V
- Emitter Base Voltage (VEBO)5V
- Height1.65mm
- Length6.7mm
- Width3.7mm
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
BCP52TA Overview
This device has a DC current gain of 40 @ 150mA 2V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of -500mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -1A.In this part, there is a transition frequency of 150MHz.As a result, it can handle voltages as low as 60V volts.The maximum collector current is 1A volts.
BCP52TA Features
the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -1A
a transition frequency of 150MHz
BCP52TA Applications
There are a lot of Diodes Incorporated
BCP52TA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 40 @ 150mA 2V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of -500mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -1A.In this part, there is a transition frequency of 150MHz.As a result, it can handle voltages as low as 60V volts.The maximum collector current is 1A volts.
BCP52TA Features
the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -1A
a transition frequency of 150MHz
BCP52TA Applications
There are a lot of Diodes Incorporated
BCP52TA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BCP52TA More Descriptions
Trans GP BJT PNP 60V 1A 4-Pin(3 Tab) SOT-223 T/R
Trans GP BJT PNP 60V 1A 4Pin SOT223 | Diodes Inc BCP52TA
Trans, Pnp, 60V, 1A, 150Deg C, 2W Rohs Compliant: Yes |Diodes Inc. BCP52TA
Trans GP BJT PNP 60V 1A 4Pin SOT223 | Diodes Inc BCP52TA
Trans, Pnp, 60V, 1A, 150Deg C, 2W Rohs Compliant: Yes |Diodes Inc. BCP52TA
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