Infineon Technologies BCM846SH6327XTSA1
- Part Number:
- BCM846SH6327XTSA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2844304-BCM846SH6327XTSA1
- Description:
- TRANS 2NPN 65V 0.1A SOT363
- Datasheet:
- BCM846SH6327XTSA1
Infineon Technologies BCM846SH6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BCM846SH6327XTSA1.
- Factory Lead Time4 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case6-VSSOP, SC-88, SOT-363
- Number of Pins6
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2007
- JESD-609 Codee3
- Part StatusLast Time Buy
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Max Power Dissipation250mW
- Terminal FormGULL WING
- Frequency250MHz
- Reference StandardAEC-Q101
- Number of Elements2
- PolarityNPN
- Power Dissipation250mW
- Transistor ApplicationAMPLIFIER
- Halogen FreeHalogen Free
- Transistor Type2 NPN (Dual)
- Collector Emitter Voltage (VCEO)5V
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 2mA 5V
- Current - Collector Cutoff (Max)15nA ICBO
- Vce Saturation (Max) @ Ib, Ic650mV @ 5mA, 100mA
- Collector Emitter Breakdown Voltage65V
- Current - Collector (Ic) (Max)100mA
- Transition Frequency250MHz
- Collector Emitter Saturation Voltage650mV
- Collector Base Voltage (VCBO)80V
- Emitter Base Voltage (VEBO)6V
- Height800μm
- Length2mm
- Width1.25mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
BCM846SH6327XTSA1 Overview
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - Bipolar (BJT) - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet BCM846SH6327XTSA1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of BCM846SH6327XTSA1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - Bipolar (BJT) - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet BCM846SH6327XTSA1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of BCM846SH6327XTSA1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
BCM846SH6327XTSA1 More Descriptions
BCM846S Series NPN 65 V 100 mA Silicon AF Transistor Array - SOT-363-6
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 2-Element, NPN, Silicon
Trans GP BJT NPN 65V 0.1A 250mW Automotive 6-Pin SOT-363 T/R
TRANS, NPN, DUAL, 65V, SOT-363; Transistor Polarity: Dual NPN; Collector Emitter Voltage V(br)ceo: 65V; Power Dissipation Pd: 250mW; DC Collector Current: 100mA; DC Current Gain hFE: 200hFE; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
NPN Silicon AF Transistor Array | Summary of Features: Precision matched transistor pair: IC10%; For current mirror applications; Low collector-emitter saturation voltage; Two (galvanic) internal isolated Transistors; Complementary type: BCM856S; BCM846S: For orientation in reel see package information below; Pb-free (RoHS compliant) package; Qualified according AEC Q101 | Target Applications: For current mirror applications
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 2-Element, NPN, Silicon
Trans GP BJT NPN 65V 0.1A 250mW Automotive 6-Pin SOT-363 T/R
TRANS, NPN, DUAL, 65V, SOT-363; Transistor Polarity: Dual NPN; Collector Emitter Voltage V(br)ceo: 65V; Power Dissipation Pd: 250mW; DC Collector Current: 100mA; DC Current Gain hFE: 200hFE; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
NPN Silicon AF Transistor Array | Summary of Features: Precision matched transistor pair: IC10%; For current mirror applications; Low collector-emitter saturation voltage; Two (galvanic) internal isolated Transistors; Complementary type: BCM856S; BCM846S: For orientation in reel see package information below; Pb-free (RoHS compliant) package; Qualified according AEC Q101 | Target Applications: For current mirror applications
The three parts on the right have similar specifications to BCM846SH6327XTSA1.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeMax Power DissipationTerminal FormFrequencyReference StandardNumber of ElementsPolarityPower DissipationTransistor ApplicationHalogen FreeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageCurrent - Collector (Ic) (Max)Transition FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)HeightLengthWidthRadiation HardeningRoHS StatusLead FreePeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberPin CountSupplier Device PackageWeightTerminationMax Operating TemperatureMin Operating TemperatureElement ConfigurationPower - MaxGain Bandwidth ProductVoltage - Collector Emitter Breakdown (Max)Max FrequencyMax Breakdown VoltageFrequency - TransitionhFE MinREACH SVHCView Compare
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BCM846SH6327XTSA14 WeeksTinSurface MountSurface Mount6-VSSOP, SC-88, SOT-3636SILICON150°C TJTape & Reel (TR)2007e3Last Time Buy1 (Unlimited)6EAR99250mWGULL WING250MHzAEC-Q1012NPN250mWAMPLIFIERHalogen Free2 NPN (Dual)5V100mA200 @ 2mA 5V15nA ICBO650mV @ 5mA, 100mA65V100mA250MHz650mV80V6V800μm2mm1.25mmNoROHS3 CompliantLead Free-------------------
-
4 WeeksTinSurface MountSurface MountSOT-563, SOT-6666SILICON150°C TJTape & Reel (TR)2009e3Active1 (Unlimited)6-300mWFLAT250MHz-2NPN300mWAMPLIFIER-2 NPN (Dual) Matched Pair45V100mA200 @ 2mA 5V15nA ICBO400mV @ 5mA, 100mA45V100mA250MHz-50V6V---NoROHS3 Compliant-26030BCM8476--------------
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---Surface Mount6-TSSOP, SC-88, SOT-363---Tape & Reel (TR)2016-Obsolete1 (Unlimited)---------------------------Non-RoHS Compliant----6--------------
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4 WeeksTinSurface MountSurface MountSOT-563, SOT-6666-150°C TJTape & Reel (TR)2006-Active1 (Unlimited)--300mW-250MHz-2NPN300mW--2 NPN (Dual) Matched Pair45V100mA200 @ 2mA 5V15nA ICBO400mV @ 5mA, 100mA45V100mA-400mV50V6V600μm1.7mm1.3mmNoROHS3 CompliantLead Free--BCM847-SOT-6664.535924gSMD/SMT150°C-65°CDual300mW250MHz45V250MHz45V250MHz200No SVHC
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