Nexperia USA Inc. BCM847BV,115
- Part Number:
- BCM847BV,115
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 3068313-BCM847BV,115
- Description:
- TRANS 2NPN 45V 0.1A SOT666
- Datasheet:
- BCM847BV,115
Nexperia USA Inc. BCM847BV,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BCM847BV,115.
- Factory Lead Time4 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSOT-563, SOT-666
- Number of Pins6
- Supplier Device PackageSOT-666
- Weight4.535924g
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2006
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TerminationSMD/SMT
- Max Operating Temperature150°C
- Min Operating Temperature-65°C
- Max Power Dissipation300mW
- Frequency250MHz
- Base Part NumberBCM847
- Number of Elements2
- PolarityNPN
- Element ConfigurationDual
- Power Dissipation300mW
- Power - Max300mW
- Gain Bandwidth Product250MHz
- Transistor Type2 NPN (Dual) Matched Pair
- Collector Emitter Voltage (VCEO)45V
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 2mA 5V
- Current - Collector Cutoff (Max)15nA ICBO
- Vce Saturation (Max) @ Ib, Ic400mV @ 5mA, 100mA
- Collector Emitter Breakdown Voltage45V
- Voltage - Collector Emitter Breakdown (Max)45V
- Current - Collector (Ic) (Max)100mA
- Max Frequency250MHz
- Collector Emitter Saturation Voltage400mV
- Max Breakdown Voltage45V
- Frequency - Transition250MHz
- Collector Base Voltage (VCBO)50V
- Emitter Base Voltage (VEBO)6V
- hFE Min200
- Height600μm
- Length1.7mm
- Width1.3mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
BCM847BV,115 Overview
This product is manufactured by Nexperia USA Inc. and belongs to the category of Transistors - Bipolar (BJT) - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet BCM847BV,115 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of BCM847BV,115. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Nexperia USA Inc. and belongs to the category of Transistors - Bipolar (BJT) - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet BCM847BV,115 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of BCM847BV,115. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
BCM847BV,115 More Descriptions
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 2-Element, NPN, Silicon
45V 300mW 100mA 2 NPN(DÃ×Al)Pairing SOT-666 Bipolar Transistors - BJT ROHS
BCM847 Series 45 V 100 mA SMT NPN/NPN Matched Double Transistor - SOT-666
BCM847BV - NPN/NPN matched double transistor
Trans GP BJT NPN 45V 0.1A 300mW Automotive 6-Pin SOT-666 T/R
Bipolar Transistor Array; Module Configuration:Dual; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency Typ, ft:250MHz; Power Dissipation Pd:300mW; DC Collector Current:100mA ;RoHS Compliant: Yes
TRANS NPN/NPN 45V 0.1A SS-MINI; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Power Dissipation Pd:300mW; DC Collector Current:100mA; DC Current Gain hFE:290; Operating Temperature Range:-65°C to 150°C; Transistor Case Style:SOT-666; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:200mV; Current Ic Continuous a Max:10mA; Gain Bandwidth ft Typ:250MHz; Hfe Min:200; Package / Case:SOT-666; Power Dissipation Pd:300mW; Termination Type:SMD
45V 300mW 100mA 2 NPN(DÃ×Al)Pairing SOT-666 Bipolar Transistors - BJT ROHS
BCM847 Series 45 V 100 mA SMT NPN/NPN Matched Double Transistor - SOT-666
BCM847BV - NPN/NPN matched double transistor
Trans GP BJT NPN 45V 0.1A 300mW Automotive 6-Pin SOT-666 T/R
Bipolar Transistor Array; Module Configuration:Dual; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency Typ, ft:250MHz; Power Dissipation Pd:300mW; DC Collector Current:100mA ;RoHS Compliant: Yes
TRANS NPN/NPN 45V 0.1A SS-MINI; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Power Dissipation Pd:300mW; DC Collector Current:100mA; DC Current Gain hFE:290; Operating Temperature Range:-65°C to 150°C; Transistor Case Style:SOT-666; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:200mV; Current Ic Continuous a Max:10mA; Gain Bandwidth ft Typ:250MHz; Hfe Min:200; Package / Case:SOT-666; Power Dissipation Pd:300mW; Termination Type:SMD
The three parts on the right have similar specifications to BCM847BV,115.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)TerminationMax Operating TemperatureMin Operating TemperatureMax Power DissipationFrequencyBase Part NumberNumber of ElementsPolarityElement ConfigurationPower DissipationPower - MaxGain Bandwidth ProductTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Max FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageFrequency - TransitionCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeReach Compliance CodePin CountTransistor Element MaterialJESD-609 CodeNumber of TerminationsECCN CodeTerminal FormReference StandardTransistor ApplicationHalogen FreeTransition FrequencyTerminal FinishPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Case ConnectionView Compare
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BCM847BV,1154 WeeksTinSurface MountSurface MountSOT-563, SOT-6666SOT-6664.535924g150°C TJTape & Reel (TR)2006Active1 (Unlimited)SMD/SMT150°C-65°C300mW250MHzBCM8472NPNDual300mW300mW250MHz2 NPN (Dual) Matched Pair45V100mA200 @ 2mA 5V15nA ICBO400mV @ 5mA, 100mA45V45V100mA250MHz400mV45V250MHz50V6V200600μm1.7mm1.3mmNo SVHCNoROHS3 CompliantLead Free----------------
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---Surface Mount6-TSSOP, SC-88, SOT-363----Tape & Reel (TR)2008Obsolete1 (Unlimited)-----------------------------------compliant6-------------
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4 WeeksTinSurface MountSurface Mount6-VSSOP, SC-88, SOT-3636--150°C TJTape & Reel (TR)2007Last Time Buy1 (Unlimited)---250mW250MHz-2NPN-250mW--2 NPN (Dual)5V100mA200 @ 2mA 5V15nA ICBO650mV @ 5mA, 100mA65V-100mA-650mV--80V6V-800μm2mm1.25mm-NoROHS3 CompliantLead Free--SILICONe36EAR99GULL WINGAEC-Q101AMPLIFIERHalogen Free250MHz----
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4 Weeks-Surface MountSurface MountSC-74, SOT-4576--150°C TJTape & Reel (TR)2008Active1 (Unlimited)---380mW250MHzBCM8472NPNDual380mW-250MHz2 NPN (Dual) Matched Pair45V100mA200 @ 2mA 5V15nA ICBO400mV @ 5mA, 100mA45V----45V-50V6V-----NoROHS3 CompliantLead Free-6SILICONe36EAR99GULL WING-AMPLIFIER-250MHzTin (Sn)26030ISOLATED
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