Diodes Incorporated BC857C-7-F

Name: BC857C-7-F
Brand: Diodes Incorporated
SKU: 2845172-BC857C-7-F
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BC857C-7-F

Manufacturer:: Diodes Incorporated

Ventron No:: 2845172-BC857C-7-F

Description:: TRANS PNP 45V 0.1A SOT23-3

ECAD Model:

Datasheet:: BC857C-7-F

Specifications

Diodes Incorporated BC857C-7-F technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated BC857C-7-F.

Factory Lead Time
19 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2008
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
SMD/SMT
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
-45V
Max Power Dissipation
300mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
-100mA
Frequency
200MHz
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
BC857C
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
350mW
Power - Max
300mW
Transistor Application
SWITCHING
Gain Bandwidth Product
200MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
45V
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
420 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA
Vce Saturation (Max) @ Ib, Ic
650mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage
45V
Transition Frequency
200MHz
Collector Emitter Saturation Voltage
-650mV
Max Breakdown Voltage
45V
Collector Base Voltage (VCBO)
50V
Emitter Base Voltage (VEBO)
5V
hFE Min
420
Height
1mm
Length
3.05mm
Width
1.4mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BC857C-7-F Overview
In this device, the DC current gain is 420 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -650mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 650mV @ 5mA, 100mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-100mA).200MHz is present in the transition frequency.An input voltage of 45V volts is the breakdown voltage.Maximum collector currents can be below 100mA volts.

BC857C-7-F Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 200MHz

BC857C-7-F Applications
There are a lot of Diodes Incorporated
BC857C-7-F applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BC857C-7-F More Descriptions

BC857 Series 45 V 100 mA SMT PNP General Purpose Transistor - SOT-23-3
DIODES INC. - BC857C-7-F - Bipolar (BJT) Single Transistor, PNP, -45 V, 200 MHz, 300 mW, -100 mA, 600 hFE
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon
Trans GP BJT PNP 45V 0.1A 350mW 3-Pin SOT-23 T/R
Transistor PNP 45V 0.1A SOT23 | Diodes Inc BC857C-7-F
PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR IN SOT23
Transistor, PNP, SOT23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-45V; Transition Frequency ft:200MHz; Power Dissipation Pd:300mW;
Transistor, Pnp, -45V, -100Ma, 300Mw, Sot-23; Transistor Polarity:Pnp; Collector Emitter Voltage Max:45V; Continuous Collector Current:100Ma; Power Dissipation:300Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins Rohs Compliant: Yes |Diodes Inc. BC857C-7-F
TRANSISTOR, PNP, SOT23; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -45V; Transition Frequency ft: 200MHz; Power Dissipation Pd: 300mW; DC Collector Current: -100mA; DC Current Gain hFE: 600hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on): -650mV; Current Ic Continuous a Max: -100mA; Gain Bandwidth ft Typ: 200MHz; Hfe Min: 420; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to 150°C; Termination Type: Surface Mount Device; Transistor Type: Small Signal

Certification