Diodes Incorporated BC857BW-7-F

Name: BC857BW-7-F
Brand: Diodes Incorporated
SKU: 2464826-BC857BW-7-F
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BC857BW-7-F

Manufacturer:: Diodes Incorporated

Ventron No:: 2464826-BC857BW-7-F

Description:: TRANS PNP 45V 0.1A SC70-3

ECAD Model:

Datasheet:: BC857BW-7-F

Specifications

Diodes Incorporated BC857BW-7-F technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated BC857BW-7-F.

Factory Lead Time
19 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Number of Pins
3
Weight
6.010099mg
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2007
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
-65V
Max Power Dissipation
200mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
-100mA
Frequency
200MHz
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
BC857BW
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
200mW
Transistor Application
SWITCHING
Gain Bandwidth Product
200MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
45V
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
220 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA ICBO
Vce Saturation (Max) @ Ib, Ic
650mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage
45V
Transition Frequency
200MHz
Collector Emitter Saturation Voltage
-650mV
Max Breakdown Voltage
45V
Collector Base Voltage (VCBO)
50V
Emitter Base Voltage (VEBO)
5V
Height
1mm
Length
2.2mm
Width
1.35mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BC857BW-7-F Overview
DC current gain in this device equals 220 @ 2mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -650mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 650mV @ 5mA, 100mA.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -100mA current rating.As a result, the part has a transition frequency of 200MHz.Breakdown input voltage is 45V volts.In extreme cases, the collector current can be as low as 100mA volts.

BC857BW-7-F Features
the DC current gain for this device is 220 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 200MHz

BC857BW-7-F Applications
There are a lot of Diodes Incorporated
BC857BW-7-F applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BC857BW-7-F More Descriptions

Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon
BC857BW Series PNP 45 V 200 mW Small Signal Surface Mount Transistor-SC-70-3
Transistor PNP 45V 0.1A SOT323 | Diodes Inc BC857BW-7-F
Transistor, Pnp, Sot323; Transistor Polarity:Pnp; Collector Emitter Voltage Max:45V; Continuous Collector Current:100Ma; Power Dissipation:200Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Transition Frequency:200Mhz Rohs Compliant: Yes |Diodes Inc. BC857BW-7-F
TRANSISTOR, PNP, SOT323; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -45V; Transition Frequency ft: 200MHz; Power Dissipation Pd: 200mW; DC Collector Current: -100mA; DC Current Gain hFE: 290hFE; Transistor Case Style: SOT-323; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on): -650mV; Current Ic Continuous a Max: -100mA; Gain Bandwidth ft Typ: 200MHz; Hfe Min: 220; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to 150°C; Termination Type: Surface Mount Device; Transistor Type: Small Signal

Certification