Nexperia USA Inc. BC857AQAZ

Name: BC857AQAZ
Brand: Nexperia USA Inc.
SKU: 2464153-BC857AQAZ
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BC857AQAZ

Manufacturer:: Nexperia USA Inc.

Ventron No:: 2464153-BC857AQAZ

Description:: TRANS PNP 45V 0.1A SOT1215

ECAD Model:

Datasheet:: BC857AQAZ

Specifications

Nexperia USA Inc. BC857AQAZ technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BC857AQAZ.

Factory Lead Time
4 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
3-XDFN Exposed Pad
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Series
Automotive, AEC-Q101
Published
2014
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Max Power Dissipation
280mW
Terminal Position
DUAL
Terminal Form
NO LEAD
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
Reference Standard
AEC-Q101; IEC-60134
JESD-30 Code
R-PDSO-N3
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Power - Max
280mW
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
400mV
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
125 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA ICBO
Vce Saturation (Max) @ Ib, Ic
400mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage
45V
Transition Frequency
100MHz
Max Breakdown Voltage
45V
Frequency - Transition
100MHz
RoHS Status
ROHS3 Compliant

Description

BC857AQAZ Overview
In this device, the DC current gain is 125 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 400mV @ 5mA, 100mA.100MHz is present in the transition frequency.An input voltage of 45V volts is the breakdown voltage.Maximum collector currents can be below 100mA volts.

BC857AQAZ Features
the DC current gain for this device is 125 @ 2mA 5V
the vce saturation(Max) is 400mV @ 5mA, 100mA
a transition frequency of 100MHz

BC857AQAZ Applications
There are a lot of Nexperia USA Inc.
BC857AQAZ applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BC857AQAZ More Descriptions

Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon
BC857XQA series - 45 V, 100 mA PNP general-purpose transistors
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Transistor, Bipolar, Aec-Q101, Pnp, -45V; Transistor Polarity:Pnp; Collector Emitter Voltage V(Br)Ceo:-45V; Transition Frequency Ft:100Mhz; Power Dissipation Pd:280Mw; Dc Collector Current:-100Ma; Dc Current Gain Hfe:125Hfe; Rohs Compliant: Yes |Nexperia BC857AQAZ

Certification