Nexperia USA Inc. BC856W,135

Name: BC856W,135
Brand: Nexperia USA Inc.
SKU: 2464430-BC856W,135
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BC856W,135

Manufacturer:: Nexperia USA Inc.

Ventron No:: 2464430-BC856W,135

Description:: TRANS PNP 65V 0.1A SOT323

ECAD Model:

Datasheet:: BC856W,135

Specifications

Nexperia USA Inc. BC856W,135 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BC856W,135.

Factory Lead Time
4 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Series
Automotive, AEC-Q101
Published
2009
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Max Power Dissipation
200mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Frequency
100MHz
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
BC856
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
200mW
Transistor Application
SWITCHING
Gain Bandwidth Product
100MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
65V
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
125 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA ICBO
Vce Saturation (Max) @ Ib, Ic
600mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage
65V
Transition Frequency
100MHz
Collector Emitter Saturation Voltage
-250mV
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
5V
Collector-Base Capacitance-Max
5pF
Radiation Hardening
No
RoHS Status
ROHS3 Compliant

Description

BC856W,135 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 125 @ 2mA 5V DC current gain.As it features a collector emitter saturation voltage of -250mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 100MHz in the part.When collector current reaches its maximum, it can reach 100mA volts.

BC856W,135 Features
the DC current gain for this device is 125 @ 2mA 5V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz

BC856W,135 Applications
There are a lot of Nexperia USA Inc.
BC856W,135 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BC856W,135 More Descriptions

Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon
Trans GP BJT PNP 65V 0.1A 200mW Automotive 3-Pin SC-70 T/R
BC856W; BC857W; BC858W - 65 V, 100 mA PNP general-purpose transistors
Transistor, Bipolar Rohs Compliant: Yes |Nexperia BC856W,135

Certification